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- Karlsson, Peter R., 1963, et al.
(author)
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Extraction of series-resistance-independent MOS transistor model parameters
- 1992
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In: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 13:11, s. 581-583
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Journal article (peer-reviewed)abstract
- It is shown by simulations and experiments how series-resistance-independent intrinsic SPICE level-3 MOS parameters can be extracted when the source and drain series resistance is extracted as a separate parameter. If this resistance is not extracted separately, not only will the mobility reduction factor depend on the series resistance but so will the maximum drift velocity, the saturation field factor, and the static feedback factor. External source and drain resistors have been used to investigate how these parameters depend on the series resistance.
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- Rydberg, Anders, 1952, et al.
(author)
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Millimeter-and submillimeter-wave multipliers using quantum-barrier-varactor (QBV) diodes
- 1990
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In: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 11:9
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Journal article (peer-reviewed)abstract
- Experimental results are presented using quantum-barrier-varactor (QBV) diodes in harmonic multipliers. Output powers and tripler conversion efficiencies of more than 2 mW and 5%, respectively, were achieved between 210 and 280 GHz. In a crude experiment, an efficiency of more than 0.2% for the fifth harmonic was measured at 310 GHz. The values for the QBV diode as a tripler are comparable to state-of-the-art results for Schottky-varactor diode triplers. The experimental results agree well with theoretical calculations
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