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- Borgström, Magnus, et al.
(author)
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Towards vertical III-V nanowire devices
- 2007
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In: Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices: IWPSD-2007. ; , s. 343-343
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Conference paper (peer-reviewed)
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2. |
- Bohnen, T., et al.
(author)
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ScAlN nanowires : A cathodoluminescence study
- 2009
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In: JOURNAL OF CRYSTAL GROWTH. - : Elsevier BV. - 0022-0248. ; 311:11, s. 3147-3151
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Journal article (peer-reviewed)abstract
- Wurtzite ScAlN nanowires, grown on a scandium nitride (ScN) thin film by hydride vapor phase epitaxy (HVPE), were analyzed by energy dispersive analysis of X-rays (EDX), CL, high resolution transmission electron spectroscopy (HRTEM), and scanning electron microscopy (SEM). The wires were grown along the [0 0 0 1] axis, had an average length of 1 mu m, a diameter between 50 and 150 run, and a ScAlN composition with a 95:5 Al:Sc ratio. Cathodoluminescence studies on the individual wires showed a sharp emission near 2.4 eV, originating from the Sc atoms in the aluminum nitride (AlN) matrix. The formation of such a semiconducting ScAlN alloy could present a new alternative to InAlN for optoelectronic applications operating in the 200-550 nm range.
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