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- Loft, S, et al.
(author)
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Oxidative DNA damage in human sperm influences time to pregnancy
- 2003
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In: Human Reproduction. - : Oxford University Press (OUP). - 0268-1161 .- 1460-2350. ; 18:6, s. 1265-1272
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Journal article (peer-reviewed)abstract
- BACKGROUND: Oxidative stress and related DNA damage in human sperm may be important for fecundity and pregnancy outcome. METHODS: We studied the level of oxidative DNA damage in terms of 7-hydro-8-oxo-2'-deoxyguanosine (8-oxodG) in sperm DNA among 225 first-pregnancy planners. Over the six menstrual cycle follow-up time, after cessation of contraception, 135 pregnancies were conceived. RESULTS: The likelihood of pregnancy occurring in a single menstrual cycle was inversely associated with the 8-oxodG level (P < 0.01). The odds ratio of pregnancy in each of the first three or all six follow-up menstrual cycles was 0.42 (0.23-0.78; 95% CI) and 0.61 (0.36-0.91) per unit increase in the log 8-oxodG/100 000 dG ratio after adjustment for potential confounders, (including sperm concentration) respectively. The intra-individual coefficient of variation of 8-oxodG in 2-6 monthly repeated sperm samples from 116 men was 19% for the 8-oxodG/dG ratio, whereas the inter-individual coefficient of variation was 49%. The 8-oxodG level was not significantly associated with smoking, consumption of alcohol or caffeine, exposure to welding fumes or the plasma levels of sex hormones. CONCLUSIONS: The data suggest that oxidative damage to sperm DNA influences fecundity and the level of damage is relatively constant within an individual and not influenced by smoking.
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2. |
- von Haartman, Martin, et al.
(author)
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Influence of gate width on 50 nm gate length Si0.7Ge0.3 channel PMOSFETs
- 2003
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In: ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE. ; , s. 529-532
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Conference paper (peer-reviewed)abstract
- Compressively strained Si0.7Ge0.3 channel pMOSFETs were fabricated and the effective hole mobility was found to be 20-30% higher in the Si0.7Ge0.3 devices than in their Si counterparts. The g(m,) normalized to gate width, was found to increase strongly with decreasing gate width in the Si0.7Ge0.3 devices, a behavior that was not found in the Si devices. All the Si0.7Ge0.3 devices down to 50 nm gate length showed enhanced g. compared to the Si devices for gate widths <1 um. At L = 50 nm and W = 0.25 mum the Si0.7Ge0.3 devices exhibited increased g(m) and I-D of about 15 %, in saturation, compared to the Si devices. I-on was 286 muA/mum and I-off was 0.23 nA/mum at V-dd = 1.5 Vfor the Si0.7Ge0.3 device.
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