| 1. |
- Agnarsson, Björn, 1977, et al.
(author)
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Rutile TiO 2 thin films grown by reactive high power impulse magnetron sputtering
- 2013
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In: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 545, s. 445-450
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Journal article (peer-reviewed)abstract
- Thin TiO 2 films were grown on Si(001) substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700 C.Optical and structural properties of films were compared both before and after post-annealing using scanning electron microscopy, low angle X-ray reflection (XRR), grazing inc idence X-ray diffractometry and spectroscopic ellipsometry.Both dcMS- and HiPIMS-grown films reveal polycrystalline rutile TiO 2 , even prior to post-annealing.The HiPIMS-grown films exhibit significantly larger grains compared to that of dcMC-grown films, approaching 100% of the film thickness for films grown at 700 C.In addition, the XRR surface roughness of HiPIMS-grown films was significantly lower than that of dcMS-grown films over the whole temperature range 300-700 C.Dispersion curves could only be obtained for the HiPIMS-grown films, which were shown to have a refractive index in the range of 2.7-2.85 at 500 nm.The results show that thin, rutile TiO 2 films, with high refractive index, can be obtained by HiPIMS at relatively low growth temperatures, without post-annealing.Furthermore, these films are smoother and show better optical characteristics than their dcMS-grown counterparts.© 2013 Elsevier B.V.All rights reserved.
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| 3. |
- Gudmundsson, Jon Tomas, 1965-
(author)
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The high power impulse magnetron sputtering discharge as an ionized physical vapor deposition tool
- 2010
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In: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 84:12, s. 1360-1364
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Journal article (peer-reviewed)abstract
- Various magnetron sputtering tools have been developed that provide a high degree of ionization of the sputtered vapor referred to as ionized physical vapor deposition (IPVD). The ions can be controlled with respect to energy and direction as they arrive to the growth surface which allows for increased control of film properties during growth. Here, the design parameters for IPVD systems are briefly reviewed. The first sputter based IPVD systems utilized a secondary plasma source between the target and the substrate in order to generate a highly ionized sputtered vapor. High power impulse magnetron sputtering (HiPIMS) is a recent sputtering technique that utilizes IPVD where a high density plasma is created by applying high power pulses at low frequency and low duty cycle to a magnetron sputtering device. A summary of the key experimental findings for the HiPIMS discharge is given. Measurements of the temporal and spatial behavior of the plasma parameters indicate electron density peak, that expands from the target with a fixed velocity. The discharge develops from an inert sputtering gas dominated to a sputtered vapor dominated during the pulse. The high electron density results in a high degree of ionization of the deposition material.
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| 5. |
- Magnus, Fridrik, et al.
(author)
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Current-voltage-time characteristics of the reactive Ar/O2 high power impulse magnetron sputtering discharge
- 2012
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In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Institute of Physics (AIP). - 0734-2101 .- 1520-8559. ; 30:5
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Journal article (peer-reviewed)abstract
- The discharge current–voltage–time waveforms are studied in the reactive Ar/O2 high power impulse magnetron sputtering discharge with a titanium target for 400 μs long pulses. The discharge current waveform is highly dependent on both the pulse repetition frequency and discharge voltage and the current increases with decreasing frequency or voltage. The authors attribute this to an increase in the secondary electron emission yield during the self-sputtering phase of the pulse, as an oxide forms on the target.
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| 6. |
- Magnus, Fridrik, et al.
(author)
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Nucleation and resistivity of ultrathin TiN films grown by high power impulse magnetron sputtering
- 2012
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In: IEEE Electron Device Letters. - : IEEE. - 0741-3106 .- 1558-0563. ; 33:7, s. 1045-1047
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Journal article (peer-reviewed)abstract
- TiN films have been grown on SiO 2 by reactive high-power impulse magnetron sputtering (HiPIMS) at temperatures of 22°C-600°C. The film resistance is monitored in situ to determine the coalescence and continuity thicknesses that decrease with increasing growth temperature with a minimum of 0.38 ± 0.05 nm and 1.7 ± 0.2 nm, respectively, at 400°C. We find that HiPIMS-deposited films have significantly lower resistivity than dc magnetron sputtered (dcMS) films on SiO 2 at all growth temperatures due to reduced grain boundary scattering. Thus, ultrathin continuous TiN films with superior electrical characteristics can be obtained with HiPIMS at reduced temperatures compared to dcMS.
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| 7. |
- Samuelsson, Mattias, et al.
(author)
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On the film density using high power impulse magnetron sputtering
- 2010
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In: Surface & Coatings Technology. - : Elsevier BV. - 0257-8972 .- 1879-3347. ; 205:2, s. 591-596
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Journal article (peer-reviewed)abstract
- The influence on thin film density using high power impulse magnetron sputtering (HIPIMS) has been investigated for eight different target materials (Al, Ti, Cr. Cu, Zr, Ag, Ta, and Pt). The density values as well as deposition rates have been compared to results obtained from thin films grown by direct current magnetron sputtering (DCMS) under the same experimental conditions. Overall, it was found that the HIPIMS deposited coatings were approximately 5-15% denser compared to the DCMS deposited coatings This could be attributed to the increased metal ion bombardment commonly seen in HIPIMS discharges, which also was verified using a global plasma model to assess the degree of ionization of sputtered metal One key feature is that the momentum transfer between the growing film and the incoming metal ions is very efficient due to the equal mass of film and bombarding species, leading to a less pronounced columnar microstructure As expected the deposition rates were found to be lower for HiPIMS compared to DCMS For several materials this decrease is not as pronounced as previously reported in the literature, which is shown in the case of Ta. Pt, and Ag with rate(HIPIMS)/rate(DCMS)-70-85%. while still achieving denser coatings.
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