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1.	Bachlechner, ME, et al. (author) Dislocation emission at the silicon/silicon nitride interface: A million atom molecular dynamics simulation on parallel computers 2000 In: PHYSICAL REVIEW LETTERS. - : AMERICAN PHYSICAL SOC. - 0031-9007. ; 84:2, s. 322-325 Journal article (peer-reviewed)abstract Mechanical behavior of the Si(111)/Si3N4(0001) interface is studied using million atom molecular dynamics simulations, At a critical value of applied strain parallel to the interface, a crack forms on the silicon nitride surface and moves toward the inter
2.	Nakano, A, et al. (author) Large-scale atomistic modeling of nanoelectronic structures 2000 In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 0018-9383. ; 47:10, s. 1804-1810 Journal article (peer-reviewed)abstract Large-scale molecular-dynamics simulations are performed on parallel computers to study critical issues on ultrathin dielectric films and device reliability in nest decade semiconductor devices, New interatomic-potential models based on many-body, reactiv
3.	Omeltchenko, A, et al. (author) Stress domains in Si(111)/a-Si3N4 nanopixel: Ten-million-atom molecular dynamics simulations on parallel computers 2000 In: PHYSICAL REVIEW LETTERS. - : AMERICAN PHYSICAL SOC. - 0031-9007. ; 84:2, s. 318-321 Journal article (peer-reviewed)abstract Parallel molecular dynamics simulations are performed to determine atomic-level stresses in Si(111)/Si3N4(0001) and Si(111)/a-Si3N4 nanopixels. Compared to the crystalline case, the stresses in amorphous Si3N4 are highly inhomogeneous in the plane of the

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Type of publication: journal article (3)

Type of content: peer-reviewed (3)

Author/Editor: Nakano, A. (3); Bachlechner, ME (3); Omeltchenko, A (3); Kalia, RK (3); Vashishta, P (3); Ebbsjo, I (3); show more...; Madhukar, A (3); Messina, P (1); Rino, JP (1); Walsh, P. (1); Branicio, P (1); Campbell, TJ (1); Ogata, S (1); Shimojo, F (1); show less...

University: Uppsala University (3)

Language: English (3)

Year: 2000 (3)

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