| 1. |
- Buyanova, Irina, 1960-, et al.
(author)
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Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers
- 2004
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In: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 22:6, s. 2668-2672
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Journal article (peer-reviewed)abstract
- The spin injection dynamics of GaMnN/InGaN multiquantum well (MQW) light emitting diodes (LEDs) grown by molecular beam epitaxy were examined using picosecond-transient and circularly polarized photoluminescence (PL) measurements. Even with the presence of a room temperature ferromagnetic GaMnN spin injector, the LEDs are shown to exhibit very low efficiency of spin injection. Based on resonant optical orientation spectroscopy, the spin loss in the structures is shown to be largely due to fast spin relaxation within the InGaN MQW, which itself destroys any spin polarization generated by optical spin orientation or electrical spin injection. Typical photoluminescence decay times were 20-40 ns in both commercial GaN MQW LEDs with emission wavelengths between 420-470 nm and in the GaMnN/InGaN multi-quantum well MQW LEDs. In the wurtzite InGaN/GaN system, biaxial strain at the interfaces give rise to large piezoelectric fields directed along the growth axis. This built-in piezofield breaks the reflection symmetry of confining potential leading to the presence of a large Rashba term in the conduction band Hamiltonian which is responsible for the short spin relaxation times.
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| 2. |
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| 3. |
- Polyakov, A. Y., et al.
(author)
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Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes
- 2004
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In: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 33:3, s. 241-247
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Journal article (peer-reviewed)abstract
- Electrical and electroluminescent properties were studied for GaN/InGaN light-emitting diodes (LEDs) with the n-GaN layer up and with the top portion of the n layer made of undoped GaMnN to allow polarization modulation by applying an external magnetic field (so-called -spin-LEDs-). The contact annealing temperature was kept to 750°C, which is the thermal stability limit for retaining room-temperature magnetic ordering in the GaMnN layer. Measurable electroluminescence (EL) was obtained in these structures at threshold voltages of ∼15 V, with a lower EL signal compared to control LEDs without Mn. This is related to the existence of two parasitic junctions between the metal and the lower contact p-type layer and between the GaMnN and the n-GaN in the top contact layer.
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| 4. |
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| 5. |
- Buyanova, Irina, 1960-, et al.
(author)
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On the origin of spin loss in GaMnN/InGaN Light-Emitting Diodes
- 2004
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 84, s. 2599-
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Journal article (peer-reviewed)abstract
- Spin polarization of GaMnN/InGaN light-emitting diodes grown by molecular beam epitaxy is analyzed. In spite of the ferromagnetic behavior of the GaMnN spin injector, the diodes are shown to exhibit very low efficiency of spin injection. Based on resonant optical orientation spectroscopy, the spin loss in the structures is shown to be largely due to fast spin relaxation within the InGaN spin detector, which itself destroys any spin polarization generated by optical spin orientation or electrical spin injection.
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| 6. |
- Buyanova, Irina, 1960-, et al.
(author)
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Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes
- 2004
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In: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 33:5, s. 467-471
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Journal article (peer-reviewed)abstract
- (Ga,Mn)/N/InGaN multiquantum well (MQW) diodes were grown by molecular beam epitaxy (MBE). The current-voltage characteristics of the diodes show the presence of a parasitic junction between the (Ga,Mn)N and the n-GaN in the top contact layer due to the low conductivity of the former layer. Both the (Ga,Mn)N/InGaN diodes and control samples without Mn doping show no or very low (up to 10% at the lowest temperatures) optical (spin) polarization at zero field or 5 T, respectively. The observed polarization is shown to correspond to the intrinsic optical polarization of the InGaN MQW, due to population distribution between spin sublevels at low temperature, as separately studied by resonant optical excitation with a photon energy lower than the bandgap of both the GaN and (Ga,Mn)N. This indicates efficient losses in the studied structures of any spin polarization generated by optical spin orientation or electrical spin injection. The observed vanishing spin injection efficiency of the spin light-emitting diode (LED) is tentatively attributed to spin losses during the energy relaxation process to the ground state of the excitons giving rise to the light emission.
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| 7. |
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| 8. |
- Fadl-Elmula, Imad, et al.
(author)
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Characterization of chromosomal abnormalities in uroepithelial carcinomas by G-banding, spectral karyotyping and fish analysis
- 2001
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In: International Journal of Cancer. - : Wiley. - 0020-7136 .- 1097-0215. ; 92:6, s. 824-831
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Journal article (peer-reviewed)abstract
- Chromosome analysis by G-banding, spectral karyotyping (SKY) and fluorescence in situ hybridization (FISH) was per formed on 24 short-term cultured transitional cell bladder carcinomas and 5 cell lines established from bladder carcinomas. Except for one tumor with an apparently normal chromosomal constitution, clonal chromosome abnormalities were detected in all examined cases by the combined approach. The application of SKY and FISH techniques improved the karyotypic descriptions, originally based on C-banding only, by identifying 32 additional numerical changes, by establishing the chromosomal origin of 27 markers and 2 ring chromosomes, by redefining 53 aberrations and by detecting 15 hidden chromosomal rearrangements. No recurrent translocation, however, was detected. The most prominent: karyotypic feature was thus the occurrence of deletions and losses of whole chromosome copies indicating the importance of tumor suppressor genes in transitional cell carcinoma pathogenesis. Invasive carcinomas were karyotypically more complex than were low grade superficial tumors. Specific leases of material from chromosome 9 and from chromosome arms I Ip and 8p, and gains of 8q and Iq seem to be early changes appearing in superficial tumors, whereas losses from 4p and 17p and the formation of an isochromosome for 5p were associated with more aggressive tumor phenotypes.
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