| 1. |
- Zhang, JT, et al.
(författare)
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Up-regulation of PINCH in the stroma of oral squamous cell carcinoma predicts nodal metastasis
- 2005
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Ingår i: Oncology Reports. - 1021-335X .- 1791-2431. ; 14:6, s. 1519-1522
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Tidskriftsartikel (refereegranskat)abstract
- Particularly interesting new cysteine-histidine rich protein (PINCH), an adapter protein involved in integrin and growth factor signalling, is up-regulated in the stroma of colorectal, breast, prostate, lung and skin cancer. Strong stromal immunostaining for PINCH is an independent prognostic indicator for reduced survival in colorectal cancer, suggesting that PINCH is involved in the signalling that promotes tumour progression. Since no study on PINCH has been carried out in oral squamous cell carcinoma (OSCC), this study aimed to determine PINCH expression in OSCC and its clinicopathological significance. PINCH protein expression was examined by immunohistochemistry in 20 normal oral mucosa and in 57 OSCC specimens, The frequency of strong PINCH immunostaining was higher in tumour-associated stroma of OSCC (37%) as compared to normal oral mucosa (10%) (p=0.02). Strong PINCH stromal immunostaining predicted nodal metastasis: 19/26 (73%) OSCC cases with nodal metastasis had strong PINCH immunostaining compared to 9/31 (29%) cases without nodal metastasis (p=0.02). The PINCH expression in OSCC was more intense in stroma at the invasive edge than in intratumoural stroma. In conclusion, the up-regulation of PINCH protein in stroma may be involved in promoting invasion and metastasis in OSCC.
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| 2. |
- Zhao, QX, et al.
(författare)
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Effect of growth temperature and post-growth thermal annealing on carrier localization and deep level emissions in GaNAs/GaAs quantum well structures
- 2005
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Ingår i: Applied Physics Letters. - : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 86:12
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Tidskriftsartikel (refereegranskat)abstract
- We report results from investigation of the optical properties of GaNAs/GaAs quantum well structures. The structures were grown by molecular-beam epitaxy at different temperatures, and subsequently postgrowth thermal treatments at different temperature were performed. The results show that the carrier localization is smaller in a structure grown at a temperature of 580 degrees C in comparison with a structure grown at 450 degrees C. Both structures also show a broaden deep level emission band. Furthermore, the deep level emission band and the carrier localization effect can be removed by thermal annealing at 650 degrees C in the structure grown at 450 degrees C. The structure quality and radiative recombination efficiency are significantly improved after annealing. However, annealing under the same condition has a negligible effect on the structure grown at 580 degrees C. (C) 2005 American Institute of Physics.
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| 3. |
- Zhao, QX, et al.
(författare)
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Effects of nitrogen incorporation on the properties of GaInNAs/GaAs quantum well structures
- 2005
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Ingår i: Journal of Applied Physics. - : American Institute of Physics. - 0021-8979 .- 1089-7550. ; 97:7
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Tidskriftsartikel (refereegranskat)abstract
- We report results from theoretical and experimental investigations of GaInNAs/GaAs quantum well structures. Optical transition energies for samples with different In and N concentrations were determined by photoluminescence measurements. The results show that the reduction of the ground-state transition energy by the introduction of N decreases with increasing In concentration. The experimental data are compared with calculations using the effective-mass approximation. Modifications of the band-gap energy due to N incorporation were accounted for using the two-level repulsion model. Proper effective-mass and band offset values, based on recent experimental work, were used. Calculated and measured transition energies show good agreement. The critical thickness, lattice constant, strain, and optical transition energies are discussed for GaInNAs/GaAs quantum well structures tuned for emission at 1.3 and 1.55 mu m, in particular. Such a simple model, within the effective-mass approximation, is a very useful guide for device design. (C) 2005 American Institute of Physics.
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| 4. |
- Zhao, QX, et al.
(författare)
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Radiative recombination of localized excitons and mobility edge excitons in GaInNAs/GaAs quantum wells with strong carrier localization
- 2005
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Ingår i: Physics Letters A. - : Elsevier Science B.V., Amsterdam.. - 0375-9601 .- 1873-2429. ; 341:04-Jan, s. 297-302
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Tidskriftsartikel (refereegranskat)abstract
- The radiative recombination in InxGa1-xN0.01As0.99/GaAs quantum well structures exhibiting strong carrier localization was investigated by optical spectroscopy. For In-concentration from 0 to 30%, the results indicate that the degree of carrier localization decreases with increasing In-concentration. At temperatures below 100 K, the mobility edge excitons as well as localized excitons are identified and their transitions energies strongly depend on the excitation intensity. At elevated temperatures the localized excitons become quenched. The temperature dependence of the photoluminescence emission energy shows different behaviors at different excitation intensities.
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