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Träfflista för sökning "WFRF:(Xia B.) srt2:(2000-2004)"

Search: WFRF:(Xia B.) > (2000-2004)

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1.
  • Cooper, K., et al. (author)
  • New Grid Scheduling and Rescheduling Methods in the GrADS Project
  • 2004
  • Conference paper (peer-reviewed)abstract
    • Summary form only given. The goal of the Grid Application Development Software (GrADS) project is to provide programming tools and an execution environment to ease program development for the grid. We present recent extensions to the GrADS software framework: 1. A new approach to scheduling workflow computations, applied to a 3D image reconstruction application; 2. A simple stop/migrate/restart approach to rescheduling grid applications, applied to a QR 3. A process-swapping approach to rescheduling, applied to an N-body simulation. Experiments validating these methods were carried out on both the GrADS MacroGrid (a small but functional grid) and the MicroGrid (a controlled emulation of the grid) and the results were demonstrated at the SC2003 conference.
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2.
  • Duteil, F., et al. (author)
  • Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation
  • 2000
  • In: Materials Science in Semiconductor Processing. - 1369-8001 .- 1873-4081. ; 3:5-6, s. 523-528
  • Journal article (peer-reviewed)abstract
    • Er and O co-doped Si structures have been prepared using molecular-beam epitaxy (MBE) with fluxes of Er and O obtained from Er and silicon monoxide (SiO) evaporation in high-temperature cells. The incorporation of Er and O has been studied for concentrations of up to 2×1020 and 1×1021 cm-3, respectively. Surface segregation of Er can take place, but with O co-doping the segregation is suppressed and Er-doped layers without any indication of surface segregation can be prepared. Si1-xGex and Si1-yCy layers doped with Er/O during growth at different substrate temperatures show more defects than corresponding Si layers. Strong emission at 1.54µm associated with the intra-4f transition of Er3+ ions is observed in electroluminescence (EL) at room temperature in reverse-biased p-i-n-junctions. To optimize the EL intensity we have varied the Er/O ratio and the temperature during growth of the Er/O-doped layer. Using an Er-concentration of around 1×1020 cm-3 we find that Er/O ratios of 1:2 or 1:4 give higher intensity than 1:1 while the stability with respect to breakdown is reduced for the highest used O concentrations. For increasing growth temperatures in the range 400-575 °C there is an increase in the EL intensity. A positive effect of post-annealing on the photoluminescence intensity has also been observed.
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5.
  • Zhu, B, et al. (author)
  • Transparent two-phase composite oxide thin films with high conductivity
  • 2001
  • In: THIN SOLID FILMS. - : ELSEVIER SCIENCE SA. - 0040-6090. ; 385:1-2, s. 209-214
  • Journal article (peer-reviewed)abstract
    • New types of transparent thin films based on CeO2-Al2O3 and -SiO2 and ion-doped CeO2 composite oxides have been developed by sol-gel process. The films have two phases: a host phase, CeO2 or ion-doped CeO2; and a guest phase Al2O3 or SiO2, so called binar
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  • Result 1-5 of 5

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