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1.
  • Chown, Ryan, et al. (author)
  • PDRs4All: IV. An embarrassment of riches: Aromatic infrared bands in the Orion Bar
  • 2024
  • In: Astronomy and Astrophysics. - 0004-6361 .- 1432-0746. ; 685
  • Journal article (peer-reviewed)abstract
    • Context. Mid-infrared observations of photodissociation regions (PDRs) are dominated by strong emission features called aromatic infrared bands (AIBs). The most prominent AIBs are found at 3.3, 6.2, 7.7, 8.6, and 11.2 µm. The most sensitive, highest-resolution infrared spectral imaging data ever taken of the prototypical PDR, the Orion Bar, have been captured by JWST. These high-quality data allow for an unprecedentedly detailed view of AIBs. Aims. We provide an inventory of the AIBs found in the Orion Bar, along with mid-IR template spectra from five distinct regions in the Bar: the molecular PDR (i.e. the three H2 dissociation fronts), the atomic PDR, and the H II region. Methods. We used JWST NIRSpec IFU and MIRI MRS observations of the Orion Bar from the JWST Early Release Science Program, PDRs4All (ID: 1288). We extracted five template spectra to represent the morphology and environment of the Orion Bar PDR. We investigated and characterised the AIBs in these template spectra. We describe the variations among them here. Results. The superb sensitivity and the spectral and spatial resolution of these JWST observations reveal many details of the AIB emission and enable an improved characterization of their detailed profile shapes and sub-components. The Orion Bar spectra are dominated by the well-known AIBs at 3.3, 6.2, 7.7, 8.6, 11.2, and 12.7 µm with well-defined profiles. In addition, the spectra display a wealth of weaker features and sub-components. The widths of many AIBs show clear and systematic variations, being narrowest in the atomic PDR template, but showing a clear broadening in the H II region template while the broadest bands are found in the three dissociation front templates. In addition, the relative strengths of AIB (sub-)components vary among the template spectra as well. All AIB profiles are characteristic of class A sources as designated by Peeters (2022, A&A, 390, 1089), except for the 11.2 µm AIB profile deep in the molecular zone, which belongs to class B11.2. Furthermore, the observations show that the sub-components that contribute to the 5.75, 7.7, and 11.2 µm AIBs become much weaker in the PDR surface layers. We attribute this to the presence of small, more labile carriers in the deeper PDR layers that are photolysed away in the harsh radiation field near the surface. The 3.3/11.2 AIB intensity ratio decreases by about 40% between the dissociation fronts and the H II region, indicating a shift in the polycyclic aromatic hydrocarbon (PAH) size distribution to larger PAHs in the PDR surface layers, also likely due to the effects of photochemistry. The observed broadening of the bands in the molecular PDR is consistent with an enhanced importance of smaller PAHs since smaller PAHs attain a higher internal excitation energy at a fixed photon energy. Conclusions. Spectral-imaging observations of the Orion Bar using JWST yield key insights into the photochemical evolution of PAHs, such as the evolution responsible for the shift of 11.2 µm AIB emission from class B11.2 in the molecular PDR to class A11.2 in the PDR surface layers. This photochemical evolution is driven by the increased importance of FUV processing in the PDR surface layers, resulting in a “weeding out” of the weakest links of the PAH family in these layers. For now, these JWST observations are consistent with a model in which the underlying PAH family is composed of a few species: the so-called ‘grandPAHs’.
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2.
  • Habart, Emilie, et al. (author)
  • PDRs4All II. JWST’s NIR and MIR imaging view of the Orion Nebula
  • 2024
  • In: Astronomy and Astrophysics. - 0004-6361 .- 1432-0746. ; 685
  • Journal article (peer-reviewed)abstract
    • Context. The James Webb Space Telescope (JWST) has captured the most detailed and sharpest infrared (IR) images ever taken of the inner region of the Orion Nebula, the nearest massive star formation region, and a prototypical highly irradiated dense photo-dissociation region (PDR). Aims. We investigate the fundamental interaction of far-ultraviolet (FUV) photons with molecular clouds. The transitions across the ionization front (IF), dissociation front (DF), and the molecular cloud are studied at high-angular resolution. These transitions are relevant to understanding the effects of radiative feedback from massive stars and the dominant physical and chemical processes that lead to the IR emission that JWST will detect in many Galactic and extragalactic environments. Methods. We utilized NIRCam and MIRI to obtain sub-arcsecond images over ∼150′′ and 42′′ in key gas phase lines (e.g., Pa α, Br α, [FeII] 1.64 µm, H2 1–0 S(1) 2.12 µm, 0–0 S(9) 4.69 µm), aromatic and aliphatic infrared bands (aromatic infrared bands at 3.3–3.4 µm, 7.7, and 11.3 µm), dust emission, and scattered light. Their emission are powerful tracers of the IF and DF, FUV radiation field and density distribution. Using NIRSpec observations the fractional contributions of lines, AIBs, and continuum emission to our NIRCam images were estimated. A very good agreement is found for the distribution and intensity of lines and AIBs between the NIRCam and NIRSpec observations. Results. Due to the proximity of the Orion Nebula and the unprecedented angular resolution of JWST, these data reveal that the molecular cloud borders are hyper structured at small angular scales of ∼0.1–1′′ (∼0.0002–0.002 pc or ∼40–400 au at 414 pc). A diverse set of features are observed such as ridges, waves, globules and photoevaporated protoplanetary disks. At the PDR atomic to molecular transition, several bright features are detected that are associated with the highly irradiated surroundings of the dense molecular condensations and embedded young star. Toward the Orion Bar PDR, a highly sculpted interface is detected with sharp edges and density increases near the IF and DF. This was predicted by previous modeling studies, but the fronts were unresolved in most tracers. The spatial distribution of the AIBs reveals that the PDR edge is steep and is followed by an extensive warm atomic layer up to the DF with multiple ridges. A complex, structured, and folded H0/H2 DF surface was traced by the H2 lines. This dataset was used to revisit the commonly adopted 2D PDR structure of the Orion Bar as our observations show that a 3D “terraced” geometry is required to explain the JWST observations. JWST provides us with a complete view of the PDR, all the way from the PDR edge to the substructured dense region, and this allowed us to determine, in detail, where the emission of the atomic and molecular lines, aromatic bands, and dust originate. Conclusions. This study offers an unprecedented dataset to benchmark and transform PDR physico-chemical and dynamical models for the JWST era. A fundamental step forward in our understanding of the interaction of FUV photons with molecular clouds and the role of FUV irradiation along the star formation sequence is provided.
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3.
  • Peeters, Els, et al. (author)
  • PDRs4All: III. JWST's NIR spectroscopic view of the Orion Bar
  • 2024
  • In: Astronomy and Astrophysics. - 0004-6361 .- 1432-0746. ; 685
  • Journal article (peer-reviewed)abstract
    • Context. JWST has taken the sharpest and most sensitive infrared (IR) spectral imaging observations ever of the Orion Bar photodis-sociation region (PDR), which is part of the nearest massive star-forming region the Orion Nebula, and often considered to be the 'prototypical'strongly illuminated PDR. Aims. We investigate the impact of radiative feedback from massive stars on their natal cloud and focus on the transition from the H II region to the atomic PDR -crossing the ionisation front (IF) -, and the subsequent transition to the molecular PDR -crossing the dissociation front (DF). Given the prevalence of PDRs in the interstellar medium and their dominant contribution to IR radiation, understanding the response of the PDR gas to far-ultraviolet (FUV) photons and the associated physical and chemical processes is fundamental to our understanding of star and planet formation and for the interpretation of any unresolved PDR as seen by JWST. Methods. We used high-resolution near-IR integral field spectroscopic data from NIRSpec on JWST to observe the Orion Bar PDR as part of the PDRs4All JWST Early Release Science programme. We constructed a 3″ × 25″ spatio-spectral mosaic covering 0.97-5.27 μm at a spectral resolution R of ~2700 and an angular resolution of 0.075″-0.173″. To study the properties of key regions captured in this mosaic, we extracted five template spectra in apertures centred on the three H2 dissociation fronts, the atomic PDR, and the H II region. This wealth of detailed spatial-spectral information was analysed in terms of variations in the physical conditions-incident UV field, density, and temperature -of the PDR gas. Results. The NIRSpec data reveal a forest of lines including, but not limited to, He I, H I, and C I recombination lines; ionic lines (e.g. Fe III and Fe II); O I and N I fluorescence lines; aromatic infrared bands (AIBs, including aromatic CH, aliphatic CH, and their CD counterparts); pure rotational and ro-vibrational lines from H2; and ro-vibrational lines from HD, CO, and CH+, with most of them having been detected for the first time towards a PDR. Their spatial distribution resolves the H and He ionisation structure in the Huygens region, gives insight into the geometry of the Bar, and confirms the large-scale stratification of PDRs. In addition, we observed numerous smaller-scale structures whose typical size decreases with distance from θ1 Ori C and IR lines from C I, if solely arising from radiative recombination and cascade, reveal very high gas temperatures (a few 1000 K) consistent with the hot irradiated surface of small-scale dense clumps inside the PDR. The morphology of the Bar, in particular that of the H2 lines, reveals multiple prominent filaments that exhibit different characteristics. This leaves the impression of a 'terraced'transition from the predominantly atomic surface region to the CO-rich molecular zone deeper in. We attribute the different characteristics of the H2 filaments to their varying depth into the PDR and, in some cases, not reaching the C+/C/CO transition. These observations thus reveal what local conditions are required to drive the physical and chemical processes needed to explain the different characteristics of the DFs and the photochemical evolution of the AIB carriers. Conclusions. This study showcases the discovery space created by JWST to further our understanding of the impact radiation from young stars has on their natal molecular cloud and proto-planetary disk, which touches on star and planet formation as well as galaxy evolution.
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4.
  • Berne, Olivier, et al. (author)
  • PDRs4All : A JWST Early Release Science Program on Radiative Feedback from Massive Stars
  • 2022
  • In: Publications of the Astronomical Society of the Pacific. - : IOP Publishing. - 0004-6280 .- 1538-3873. ; 134:1035
  • Journal article (peer-reviewed)abstract
    • Massive stars disrupt their natal molecular cloud material through radiative and mechanical feedback processes. These processes have profound effects on the evolution of interstellar matter in our Galaxy and throughout the universe, from the era of vigorous star formation at redshifts of 1-3 to the present day. The dominant feedback processes can be probed by observations of the Photo-Dissociation Regions (PDRs) where the far-ultraviolet photons of massive stars create warm regions of gas and dust in the neutral atomic and molecular gas. PDR emission provides a unique tool to study in detail the physical and chemical processes that are relevant for most of the mass in inter- and circumstellar media including diffuse clouds, proto-planetary disks, and molecular cloud surfaces, globules, planetary nebulae, and star-forming regions. PDR emission dominates the infrared (IR) spectra of star-forming galaxies. Most of the Galactic and extragalactic observations obtained with the James Webb Space Telescope (JWST) will therefore arise in PDR emission. In this paper we present an Early Release Science program using the MIRI, NIRSpec, and NIRCam instruments dedicated to the observations of an emblematic and nearby PDR: the Orion Bar. These early JWST observations will provide template data sets designed to identify key PDR characteristics in JWST observations. These data will serve to benchmark PDR models and extend them into the JWST era. We also present the Science-Enabling products that we will provide to the community. These template data sets and Science-Enabling products will guide the preparation of future proposals on star-forming regions in our Galaxy and beyond and will facilitate data analysis and interpretation of forthcoming JWST observations.
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5.
  • Adolf, A., et al. (author)
  • Release of astroglial vimentin by extracellular vesicles: Modulation of binding and internalization of C3 transferase in astrocytes and neurons
  • 2019
  • In: Glia. - : Wiley. - 0894-1491. ; 67:4, s. 703-717
  • Journal article (peer-reviewed)abstract
    • Clostridium botulinum C3 transferase (C3bot) ADP-ribosylates rho proteins to change cellular functions in a variety of cell types including astrocytes and neurons. The intermediate filament protein vimentin as well as transmembrane integrins are involved in internalization of C3bot into cells. The exact contribution, however, of these proteins to binding of C3bot to the cell surface and subsequent cellular uptake remains to be unraveled. By comparing primary astrocyte cultures derived from wild-type with Vim(-/-) mice, we demonstrate that astrocytes lacking vimentin exhibited a delayed ADP-ribosylation of rhoA concurrent with a blunted morphological response. This functional impairment was rescued by the extracellular excess of recombinant vimentin. Binding assays using C3bot harboring a mutated integrin-binding RGD motif (C3bot-G89I) revealed the involvement of integrins in astrocyte binding of C3bot. Axonotrophic effects of C3bot are vimentin dependent and postulate an underlying mechanism entertaining a molecular cross-talk between astrocytes and neurons. We present functional evidence for astrocytic release of vimentin by exosomes using an in vitro scratch wound model. Exosomal vimentin+ particles released from wild-type astrocytes promote the interaction of C3bot with neuronal membranes. This effect vanished when culturing Vim(-/-) astrocytes. Specificity of these findings was confirmed by recombinant vimentin propagating enhanced binding of C3bot to synaptosomes from rat spinal cord and mouse brain. We hypothesize that vimentin+ exosomes released by reactive astrocytes provide a novel molecular mechanism constituting axonotrophic (neuroprotective) and plasticity augmenting effects of C3bot after spinal cord injury.
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6.
  • Mikhaylov, Aleksey I., et al. (author)
  • On the ion implantation of phosphorus as a method for the passivation of states at the interface between 4H-SiC and SiO2 produced by thermal oxidation in dry oxygen
  • 2014
  • In: Semiconductors (Woodbury, N.Y.). - : Maik Nauka-Interperiodica Publishing. - 1063-7826 .- 1090-6479. ; 48:12, s. 1581-1585
  • Journal article (peer-reviewed)abstract
    • A method is suggested for reducing the density of surface states at the 4H-SiC/SiO2 interface by the implantation of phosphorus ions into a 4H-SiC epitaxial layer immediately before the growth of a gate insulator in an atmosphere of dry oxygen. A significant decrease in the density of surface states is observed at a phosphor-ion concentration at the SiO2/SiC interface exceeding 1018 cm−3. However, together with the passivation of surface states, the introduction of phosphorus ions leads to an increase in the built-in charge in the insulator and also slightly deteriorates the reliability of the gate insulator fabricated by this technique.
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7.
  • Kikuta, H, et al. (author)
  • Genomic regulatory blocks encompass multiple neighboring genes and maintain conserved synteny in vertebrates
  • 2007
  • In: Genome research. - : Cold Spring Harbor Laboratory. - 1088-9051. ; 17:5, s. 545-555
  • Journal article (peer-reviewed)abstract
    • We report evidence for a mechanism for the maintenance of long-range conserved synteny across vertebrate genomes. We found the largest mammal-teleost conserved chromosomal segments to be spanned by highly conserved noncoding elements (HCNEs), their developmental regulatory target genes, and phylogenetically and functionally unrelated “bystander” genes. Bystander genes are not specifically under the control of the regulatory elements that drive the target genes and are expressed in patterns that are different from those of the target genes. Reporter insertions distal to zebrafish developmental regulatory genes pax6.1/2, rx3, id1, and fgf8 and miRNA genes mirn9-1 and mirn9-5 recapitulate the expression patterns of these genes even if located inside or beyond bystander genes, suggesting that the regulatory domain of a developmental regulatory gene can extend into and beyond adjacent transcriptional units. We termed these chromosomal segments genomic regulatory blocks (GRBs). After whole genome duplication in teleosts, GRBs, including HCNEs and target genes, were often maintained in both copies, while bystander genes were typically lost from one GRB, strongly suggesting that evolutionary pressure acts to keep the single-copy GRBs of higher vertebrates intact. We show that loss of bystander genes and other mutational events suffered by duplicated GRBs in teleost genomes permits target gene identification and HCNE/target gene assignment. These findings explain the absence of evolutionary breakpoints from large vertebrate chromosomal segments and will aid in the recognition of position effect mutations within human GRBs.
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8.
  • Neelov, I.M., et al. (author)
  • Computer simulations of stretching and collapse of polymer molecules in solution
  • 2003
  • In: Macromolecular Symposia. - : Wiley. - 1022-1360 .- 1521-3900. ; 191
  • Conference paper (peer-reviewed)abstract
    • Computer simulations are reported for system of linear polymer molecules, diblock copolymer and dendrimer in dilute solution without and with elongational flow. The effect of fluctuating hydrodynamics interactions (HI) on the coil-stretch transition of linear polymers and dendrimers in elongational flow is studied. The process of coiling of homo- and blockcopolymer from completely extended state is also simulated.
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9.
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10.
  • Bakowski, Mietek, et al. (author)
  • Design and characterization of newly developed 10 kV 2 A SiC p-i-n diode for soft-switching industrial power supply
  • 2015
  • In: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers Inc.. - 0018-9383 .- 1557-9646. ; 62:2, s. 366-373
  • Journal article (peer-reviewed)abstract
    • 10 kV, 2 A SiC p-i-n diodes have been designed and fabricated. The devices feature excellent stability of forward characteristics and robust junction termination with avalanche capability of 1 J. The fabricated diodes have been electrically evaluated with respect to dynamic ON-state voltage, reverse recovery behavior, bipolar stability, and avalanche capability. More than 60% reduction of losses has been demonstrated using newly developed 10-kV p-i-n diodes in a multikilowatt high voltage, high-frequency dc/dc soft-switching converter
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11.
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12.
  • Erdélyi, Máté, 1975- (author)
  • Towards the Development of Photoswitchable β-Hairpin Mimetics
  • 2004
  • Doctoral thesis (other academic/artistic)abstract
    • Peptide secondary structure mimetics are important tools in medicinal chemistry, as they provide analogues of endogeneous peptides with new physicochemical and pharmacological properties. The β-hairpin motif has been shown to be involved in numerous physiological processes, among others in regulation of eucariotic gene transcription. This thesis addresses the design, synthesis and conformational analysis of photoswitchable β-hairpin mimetics.The developmental work included the establishment of an improved procedure for cross coupling of aryl halides with terminal alkynes. Microwave mediated Sonogashira couplings in closed vessels were optimized under homogeneous and solid-phase conditions furnishing excellent yields for a large variety of substrates within 5 – 25 minutes. In addition, microwave heating was shown not to have any non-conventional effect on the reaction rate.Furthermore, the most important factors affecting β-hairpin stability were evaluated. Studies of tetrapeptide and decapeptide analogues revealed the essential role of the β-turn in initiation of hairpin folding. Moreover, hydrogen bonding was shown to be the main interchain stabilizing force, whereas hydrophobic interactions were found to be relatively weak. Nevertheless, hydrophobic packing appears to provide an important contribution to the thermodynamic stability of β-hairpins.Photoswitchable peptidomimetics were prepared by incorporation of various stilbene moieties into tetra- and decapeptides. Synthesis, photochemical isomerisation and spectroscopic conformational analysis of the compounds were performed.
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13.
  • Ghandi, Reza, et al. (author)
  • Surface-passivation effects on the performance of 4H-SiC BJTs
  • 2011
  • In: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 58, s. 259-265
  • Journal article (peer-reviewed)abstract
    • In this brief, the electrical performance in terms of maximum current gain and breakdown voltage is compared experimentally and by device simulation for 4H-SiC BJTs passivated with different surface-passivation layers. Variation in bipolar junction transistor (BJT) performance has been correlated to densities of interface traps and fixed oxide charge, as evaluated through MOS capacitors. Six different methods were used to fabricate SiO2 surface passivation on BJT samples from the same wafer. The highest current gain was obtained for plasma-deposited SiO2 which was annealed in N2O ambient at 1100 °C for 3 h. Variations in breakdown voltage for different surface passivations were also found, and this was attributed to differences in fixed oxide charge that can affect the optimum dose of the high-voltage junction-termination extension (JTE). The dependence of breakdown voltage on the dose was also evaluated through nonimplanted BJTs with etched JTE.
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14.
  • Gil-Romera, Graciela, et al. (author)
  • Long-term fire resilience of the Ericaceous Belt, Bale Mountains, Ethiopia
  • 2019
  • In: Biology Letters. - : The Royal Society. - 1744-9561 .- 1744-957X. ; 15:7
  • Journal article (peer-reviewed)abstract
    • Fire is the most frequent disturbance in the Ericaceous Belt (ca 3000-1300 m.a.s.l.), one of the most important plant communities of tropical African mountains. Through resprouting after fire, Erica establishes a positive fire feedback under certain burning regimes. However, present-day human activity in the Bale Mountains of Ethiopia includes fire and grating systems that may have a negative impact on the resilience of the ericaceous ecosystem. Current knowledge of Erica-fire relationships is based on studies of modern vegetation, lacking a longer time perspective that can shed light on baseline conditions for the fire feedback. We hypothesite that fire has influenced Erica communities in the Bale Mountains at millennial time-scales. To test this, we (1) identity the tire history ot the Bale Mountains through a pollen and charcoal record from Garba Guracha, a lake at 3950 m.a.s.l., and (2) describe the long-term bidirectional feedback between wildfire and Erica, which may control the ecosystem's resilience. Our results support fire occurrence in the area since ca 14 000 years ago, with particularly intense burning during the early Holocene, 10.8-6.0 cal ka BP. We show that a positive feedback between Erica abundance and fire occurrence was in operation throughout the Lateglacial and Holocene, and interpret the Ericaceous Bolt of the Ethiopian mountains as a long-term fire resilient ecosystem. We propose that controlled burning should be an integral part of landscape management in the Bale Mountains National Park.
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16.
  • Hertel, Stefan, et al. (author)
  • Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics
  • 2012
  • In: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723. ; 3
  • Journal article (peer-reviewed)abstract
    • Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as for Schottky contacts side-by-side on the same chip. We demonstrate normally on and normally off operation of a single transistor with on/off ratios exceeding 10 4 and no damping at megahertz frequencies. In its simplest realization, the fabrication process requires only one lithography step to build transistors, diodes, resistors and eventually integrated circuits without the need of metallic interconnects.
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17.
  • Johansson, A, et al. (author)
  • Diffusion and ionic conductivity in Li(CF3SO3)PEG(10) and LiN(CF3SO2)(2)PEG(10)
  • 1996
  • In: Polymer. - : Elsevier. - 0032-3861. ; 37:8, s. 1387-1393
  • Journal article (peer-reviewed)abstract
    • Self-diffusion of the cation, the anion and the polymer chain in the low-molecular-weight polymer electrolyte systems Li(CF3SO3)PEG(10) and LiN(CF3SO2)(2)PEG(10) has been studied as a function of temperature using nuclear magnetic resonance spectroscopy.
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18.
  • Lorenzzi, Jean, et al. (author)
  • 3C-SiC MOS based devices : from material growth to device characterization
  • 2011
  • In: Silicon carbide and related materials 2010. - : Trans Tech Publications, Ltd.. ; , s. 433-
  • Conference paper (peer-reviewed)abstract
    • In this work we report on the growth and preparation of 3C-SiC(111) material for metal-oxide-semiconductor (MOS) application. In order to achieve reasonable material quality to prepare MOS capacitors several and crucial steps are needed: 1) heteroepitaxial growth of high quality 3C-SiC(111) layer by vapour-liquid-solid mechanism on 6H-SiC(0001) substrate, 2) surface polishing, 3) homoepitaxial re-growth by chemical vapour deposition and 4) use of an advanced oxidation process combining plasma enhanced chemical vapour deposition (PECVD) SiO2 and short post-oxidation steps in wet oxygen. Combining all these processes the interface traps density (D-it)can be drastically decreased down to 1.2 x 10(10) eV(-1)cm(-2) at 0.63 eV below the conduction band. To our knowledge, these values are the best ever reported for SiC material in general and 3C-SiC in particular.
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19.
  • Mikhaylov, Aleksey I., et al. (author)
  • Alternative method of interface traps passivation by introducing of thin silicon nitride layer at 4H-SiC/SiO2 interface
  • 2014
  • In: Materials Research Society Symposium Proceedings. - : Springer Science and Business Media LLC.
  • Conference paper (peer-reviewed)abstract
    • An alternative approach for reduction of interface traps density at 4H-SiC/SiO2 interface is proposed. Silicon nitride / silicon oxide stack was deposited on p-type 4H-SiC (0001) epilayers and subsequently over-oxidized. The electrical characterization of the interface was done by employing metal-oxide semiconductor (MOS) devices, inversion-channel MOS devices and lateral MOS field effect transistors (MOSFETs).
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20.
  • Mikhaylov, Aleksey I., et al. (author)
  • Effect of phosphorus implantation prior to oxidation on electrical properties of thermally grown SiO2/4H-SiC MOS structures
  • 2015
  • In: Mater. Sci. Forum. - : Trans Tech Publications Ltd. - 9783038352945 ; , s. 133-138
  • Conference paper (peer-reviewed)abstract
    • The electrical properties of metal-oxide-semiconductor (MOS) devices fabricated using dry oxidation on phosphorus-implanted n-type 4H-SiC (0001) epilayers have been investigated. MOS structures were compared in terms of interface traps and reliability with reference sample which was produced by dry oxidation under the same conditions. The notably lower interface traps density measured in MOS capacitor with phosphorus concentration exceeding 1018 cm-3 at the SiO2/SiC interface was attributed to interface traps passivation by incorporated phosphorus ions. © (2015) Trans Tech Publications, Switzerland.
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21.
  • Murdoch, David R, et al. (author)
  • Clinical presentation, etiology, and outcome of infective endocarditis in the 21st century: the International Collaboration on Endocarditis-Prospective Cohort Study.
  • 2009
  • In: Archives of internal medicine. - : American Medical Association (AMA). - 1538-3679 .- 0003-9926. ; 169:5, s. 463-73
  • Journal article (peer-reviewed)abstract
    • BACKGROUND: We sought to provide a contemporary picture of the presentation, etiology, and outcome of infective endocarditis (IE) in a large patient cohort from multiple locations worldwide. METHODS: Prospective cohort study of 2781 adults with definite IE who were admitted to 58 hospitals in 25 countries from June 1, 2000, through September 1, 2005. RESULTS: The median age of the cohort was 57.9 (interquartile range, 43.2-71.8) years, and 72.1% had native valve IE. Most patients (77.0%) presented early in the disease (<30 days) with few of the classic clinical hallmarks of IE. Recent health care exposure was found in one-quarter of patients. Staphylococcus aureus was the most common pathogen (31.2%). The mitral (41.1%) and aortic (37.6%) valves were infected most commonly. The following complications were common: stroke (16.9%), embolization other than stroke (22.6%), heart failure (32.3%), and intracardiac abscess (14.4%). Surgical therapy was common (48.2%), and in-hospital mortality remained high (17.7%). Prosthetic valve involvement (odds ratio, 1.47; 95% confidence interval, 1.13-1.90), increasing age (1.30; 1.17-1.46 per 10-year interval), pulmonary edema (1.79; 1.39-2.30), S aureus infection (1.54; 1.14-2.08), coagulase-negative staphylococcal infection (1.50; 1.07-2.10), mitral valve vegetation (1.34; 1.06-1.68), and paravalvular complications (2.25; 1.64-3.09) were associated with an increased risk of in-hospital death, whereas viridans streptococcal infection (0.52; 0.33-0.81) and surgery (0.61; 0.44-0.83) were associated with a decreased risk. CONCLUSIONS: In the early 21st century, IE is more often an acute disease, characterized by a high rate of S aureus infection. Mortality remains relatively high.
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22.
  • Prigozhin, Daniil M, et al. (author)
  • Periphilin self-association underpins epigenetic silencing by the HUSH complex
  • 2020
  • In: Nucleic Acids Research. - : Oxford University Press (OUP). - 1362-4962 .- 0305-1048. ; 48:18, s. 10313-10328
  • Journal article (peer-reviewed)abstract
    • Transcription of integrated DNA from viruses or transposable elements is tightly regulated to prevent pathogenesis. The Human Silencing Hub (HUSH), composed of Periphilin, TASOR and MPP8, silences transcriptionally active viral and endogenous transgenes. HUSH recruits effectors that alter the epigenetic landscape and chromatin structure, but how HUSH recognizes target loci and represses their expression remains unclear. We identify the physicochemical properties of Periphilin necessary for HUSH assembly and silencing. A disordered N-terminal domain (NTD) and structured C-terminal domain are essential for silencing. A crystal structure of the Periphilin-TASOR minimal core complex shows Periphilin forms an α-helical homodimer, bound by a single TASOR molecule. The NTD forms insoluble aggregates through an arginine/tyrosine-rich sequence reminiscent of low-complexity regions from self-associating RNA-binding proteins. Residues required for TASOR binding and aggregation were required for HUSH-dependent silencing and genome-wide deposition of repressive mark H3K9me3. The NTD was functionally complemented by low-complexity regions from certain RNA-binding proteins and proteins that form condensates or fibrils. Our work suggests the associative properties of Periphilin promote HUSH aggregation at target loci.
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23.
  • Roensch, Sebastian, et al. (author)
  • Drain-current deep level transient spectroscopy investigation on epitaxial graphene/6H-SiC field effect transistors
  • 2014
  • In: Mater. Sci. Forum. - 9783038350101 ; , s. 436-439
  • Conference paper (peer-reviewed)abstract
    • The electrically active deep levels in a graphene/silicon carbide field effect transistor (FET) were investigated by drain-current deep level transient spectroscopy (ID-DLTS). An evaluation procedure for ID-DLTS is developed in order to obtain the activation energy, the capture cross section and the trap concentration. We observed three defect centers corresponding to the intrinsic defects E1/E2, Ei and Z1/Z2 in n-type 6H-SiC. The determined parameters have been verified by conventional capacitance DLTS.
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24.
  • Schöner, Adolf, et al. (author)
  • Progress in buried grid technology for improvements in on-resistance of high voltage SiC devices
  • 2016
  • In: ECS Transactions. - : The Electrochemical Society. - 9781607685395 ; , s. 183-190
  • Conference paper (peer-reviewed)abstract
    • Buried grid technology is suggested to protect field sensitive device areas from high electric field in order to improve the high temperature and high voltage performance of SiC devices. More than three orders of magnitude lower leakage currents have been demonstrated at high temperature operation. The drawback is that the total resistance increases due to the introduction of the buried grid leading to higher voltage drop at rated current and higher conduction losses. In this paper, we discuss doping and barrier engineering methods in order to take full advantage of the superior shielding effect of the buried grid technology and at the same time minimize the effect on the current conduction. As example, the design considerations for a 1200 V SiC buried grid JBS diode in terms of epi structure doping as well as buried grid properties is comprehensively investigated to optimize the on-state condition.
  •  
25.
  • Sledziewski, Tomasz, et al. (author)
  • Reduction of density of 4H-SiC/SiO2 interface traps by pre-oxidation phosphorus implantation
  • 2014
  • In: Materials Science Forum. - 9783038350101 ; , s. 575-578
  • Conference paper (peer-reviewed)abstract
    • The effect of phosphorus (P) on the electrical properties of the 4H-SiC/SiO2 interface was investigated. Phosphorus was introduced by surface-near ion implantation with varying ion energy and dose prior to thermal oxidation. Secondary ion mass spectrometry revealed that only part of the implanted P followed the oxidation front to the interface. A negative flatband shift due to residual P in the oxide was found from C-V measurements. Conductance method measurements revealed a significant reduction of density of interface traps Dit with energy EC-Eit > 0.3 V for P+-implanted samples with [P]interface = 1.5 · 1018 cm-3 in the SiC layer at the interface. .
  •  
26.
  •  
27.
  • Yen, Cheng Tyng, et al. (author)
  • Comparative study of 4H-SiC DMOSFETs with N2O thermal oxide and deposited oxide with post oxidation anneal
  • 2014
  • In: Materials Science Forum. - 9783038350101 ; , s. 989-992
  • Conference paper (peer-reviewed)abstract
    • Two kinds of gate oxides, direct thermal oxidation in a nitrous oxide ambient at 1250°C (TGO) and a PECVD oxide followed by a post deposition oxidation in nitrous oxide ambient at 1150°C (DGO) were studied. DGO showed a lower interface trap density and was able to provide a higher current as being implemented in MOSFETs through the improved channel mobility. However the 6.45 MV/cm average breakdown field of DGO is lower than the 10.1 MV/cm breakdown field of TGO. The lower breakdown field, more leaky behavior and the existence of multiple breakdown mechanisms suggest that DGO needs further improvements before it can be used in real applications.
  •  
28.
  • Yen, Cheng Tyng, et al. (author)
  • SiC epi-channel lateral MOSFETs
  • 2014
  • In: Materials Science Forum. - 9783038350101 ; , s. 927-930
  • Conference paper (peer-reviewed)abstract
    • SiC lateral MOSFETs with multi-layered epi-channels were studied in this work. The epi-channel consisting of a high concentration n-type epilayer sandwiched between two lightly doped p-type layers showed a maximum field effect mobility of 17 cm2/V.s, as compared to 1.53 cm2/V.s for inversion type devices without epi-channels. These devices are normally-off with an average threshold voltage of 1.34V.
  •  
29.
  •  
30.
  • Zhang, Andy Zhenzhong, et al. (author)
  • Planarization of epitaxial SiC trench structures by plasma ion etching
  • 2015
  • In: Materials Science Forum. - 0255-5476 .- 1662-9752. - 9783038354789 ; 821-823, s. 549-552
  • Journal article (peer-reviewed)abstract
    • In this work, we present a planarization concept for epitaxial SiC trench structures involving reactive ion etching (RIE) and inductive coupled plasma (ICP) dry etching. The general idea is to transfer the flat surface from spun-on BCB/photo-resist layers to deposited silicon dioxide and finally to bulk SiC by applying process conditions with the same etch rate for the different materials. In this way several microns of unwanted material can be removed and planar SiC surfaces are obtained. With this method trench structures filled by epitaxial re-growth can be planarized with smooth surfaces and good homogeneity over the wafer. Cost-efficient device manufacturing can be achieved by using standard semiconductor process equipment. This technology makes it possible to manufacture advanced epitaxial SiC material structures for devices such as trench JBS diodes and double-gate trench JFETs.
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