| 1. |
- Dillner, Lars, 1968, et al.
(author)
-
Analysis of Symmetric Varactor Frequency Multipliers
- 1997
-
In: Microwave and Optical Technology Letters. ; 15:1, s. 26-29
-
Journal article (peer-reviewed)abstract
- We investigate efficiency limitations of frequency multipliers with the use of a simple model for symmetric varactors. Our calculations show that the conversion efficiency is improved for a C(V) shape with large nonlinearity at zero volt bias. For quintuplers, the optimal embedding impedance at the third harmonic is an inductance in resonance with the varactor diode capacitance.
|
|
| 2. |
|
|
| 3. |
|
|
| 4. |
|
|
| 5. |
- Fu, Ying, 1964, et al.
(author)
-
AlGaAs/GaAs and InAlAs/InGaAs Heterostructure Barrier Varactors
- 1997
-
In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 82:11, s. 5568-5572
-
Journal article (peer-reviewed)abstract
- By the Schrödinger and Poisson equations, we have theoretically investigated AlGaAs/GaAs and InAlAs/InGaAs single barrier varactors. The energy band structure, carrier distribution, and conduction current are fully exploited for varactor design. We have explained the experimental current-voltage and capacitance-voltage measurements very well. A simple analytical model for energy band structure is derived based on the Schrödinger and Poisson equation calculation. It is found that a barrier structure of 3 nm Al0.3Ga0.7As/3 nm AlAs/3nm Al0.3Ga0.7As for an Al0.3Ga0.7As/GaAs varactor and a barrier structure of 8 nm In0.52Al0.48As/3 nm AlAs/8 nm In0.52Al0.48As for In0.52Al0.48As/In0.47GaAs are optimal for minimal conduction currents.
|
|
| 6. |
|
|
| 7. |
- Stake, Jan, 1971, et al.
(author)
-
Analysis of Carrier Transport in a Heterostructure Barrier Varactor Diode Tripler
- 1997
-
In: International Semiconductor Device Research Symposium (ISDRS). ; , s. 183-186
-
Conference paper (peer-reviewed)abstract
- We report the time evolution and the spatial variation of the conduction band, the electric field, and the carrier density for a GaAs/Al0.7GaAs Heterostructure Barrier Varactor diode operating in a 3x90 GHz frequency tripler. The third harmonic output power and optimal embedding impedances are given for two different diodes at pump powers of 50 mW and 100 mW.
|
|
