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Träfflista för sökning "WFRF:(Elahipanah Hossein) srt2:(2013)"

Search: WFRF:(Elahipanah Hossein) > (2013)

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1.
  • Elahipanah, Hossein, et al. (author)
  • Process variation tolerant 4H-SiC power devices utilizing trench structures
  • 2013
  • In: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. - 9783037856246 ; 740-742, s. 809-812
  • Journal article (peer-reviewed)abstract
    • Silicon carbide (SiC) is one of the most attractive semiconductors for high voltage applications. The breakdown voltage of SiC-based devices highly depends on the variation of the fabrication process including doping of the epilayers and the etching steps. In this paper, we show a way to diminish this variability by employing novel trench structures. The influence of the process variations in terms of doping concentration and etching has been studied and compared with conventional devices. The breakdown voltage variation (ΔVBr) of 450 V and 2100 V is obtained for the ±20% variation of doping concentration of the devices with and without the trench structures, respectively. For ±20% variation in etching steps, the maximum ΔVBR of 380 V is obtained for the device with trench structures in comparison to 1800 V for the conventional structure without trench structures. These results show that the breakdown voltage variation is significantly reduced by utilizing the proposed structure.
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2.
  • Salemi, Arash, et al. (author)
  • Area-optimized JTE simulations for 4.5 kV non ion-implanted sic BJT
  • 2013
  • In: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. - 9783037856246 ; 740-742, s. 974-977
  • Journal article (peer-reviewed)abstract
    • Non ion-implantation mesa etched 4H-SiC BJT with three-zone JTE of optimized lengths and doses (descending sequences) has been simulated. This design presents an efficient electric field distribution along the device. The device area has been optimized and considerably reduced. As a result of this comprehensive optimization, a high breakdown voltage (>6 kV) and high current gain (β=50) have been achieved; meanwhile the device area with a constant emitter and base contact area (300×300 μm2) will be reduced by about 30%.
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  • Result 1-2 of 2
Type of publication
journal article (2)
Type of content
peer-reviewed (2)
Author/Editor
Östling, Mikael (2)
Zetterling, Carl-Mik ... (2)
Buono, Benedetto (2)
Elahipanah, Hossein (2)
Salemi, Arash (2)
University
Royal Institute of Technology (2)
Language
English (2)
Research subject (UKÄ/SCB)
Engineering and Technology (1)
Year
2013 (2)Undo refine

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