↓ Direkt till sidans innehåll
↓ Direkt till sidans sekundära innehåll (sidomenyn)

Träfflista för sökning "WFRF:(Gottlob H. D. B.) srt2:(2010)"

Search: WFRF:(Gottlob H. D. B.) > (2010)

Result 1-4 of 4

Sort/group result

Sort by: Hits per page:

Enumeration	Reference	Cover	Find
1.	Raeissi, Bahman, 1979, et al. (author) Interface state properties of high-k/SiOx/Si interfaces portrayed by multiparameter admittance spectroscopy 2010 In: Proceedings of the 16th Workshop on Dielectrics in Microelectronics, p. 103, Bratislava, June 28 - 30 2010. Conference paper (peer-reviewed)
2.	Engström, Olof, 1943, et al. (author) Capture cross sections for holes at LaLuO/Si interfaces 2010 In: Proceedings of the 16th Workshop on Dielectrics in Microelectronics, p. 29, Bratislava, June 28 - 30 2010. Conference paper (peer-reviewed)
3.	Engström, Olof, 1943, et al. (author) Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers (Invited) 2010 In: Journal of Telecommunications and Information Technology. - 1509-4553 .- 1899-8852. ; 1, s. 10- Journal article (peer-reviewed)
4.	Gomeniuk, Y. Y, et al. (author) Electrical properties of LaLuO3/Si(100) structures prepared by molecular beam deposition 2010 In: ECS Transactions. - : The Electrochemical Society. - 1938-5862 .- 1938-6737. - 9781566778220 ; 33:3, s. 221-227 Conference paper (peer-reviewed)abstract The paper presents the results of electrical characterization in the wide temperature range (120-320 K) of the interface and bulk properties of high-k LaLuO3 dielectric deposited by molecular beam deposition (MBD) on silicon substrate. The energy distribution of interface state density is presented and typical maxima of 1.2×1011 and 2.5×10 11 eV-1 cm-2 were found at about 0.25-0.3 eV from the silicon valence band. The charge carrier transport through the dielectric at the forward bias was found to occur via Poole-Frenkel mechanism, while variable range hopping conduction (Mott's law) controls the current at the reverse bias.

Skapa referenser, mejla, bekava och länka

Permalink

Result 1-4 of 4

Refine your search

Type of publication: conference paper (3); journal article (1)

Type of content: peer-reviewed (4)

Author/Editor: Engström, Olof, 1943 (4); Raeissi, Bahman, 197 ... (4); Gottlob, H. D. B. (4); Schmidt, M. (2); Schubert, J (2); Cherkaoui, K. (2); show more...; Lopes, J. M. J. (2); Hall, S. (1); Hurley, P. K. (1); Ducroquet, F. (1); Piscator, Johan, 197 ... (1); Mitrovic, I. Z. (1); Gutt, T (1); Przewlocki, H.M. (1); Monaghan, S (1); Gomeniuk, Y. Y. (1); Nazarov, A. N. (1); Gomieniuk, Y. V. (1); show less...

University: Chalmers University of Technology (4)

Language: English (4)

Research subject (UKÄ/SCB): Engineering and Technology (4)

Year: 2010 (4)Undo refine

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

Copyright © LIBRIS - National Library Systems
LIBRIS.kb.se

pil uppåt

Close

Copy and save the link in order to return to this view