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Search: WFRF:(Hedlund Brian) > (2020)

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1.
  • Murray, Alison E., et al. (author)
  • Roadmap for naming uncultivated Archaea and Bacteria
  • 2020
  • In: Nature Microbiology. - : NATURE PUBLISHING GROUP. - 2058-5276. ; 5:8, s. 987-994
  • Journal article (peer-reviewed)abstract
    • The assembly of single-amplified genomes (SAGs) and metagenome-assembled genomes (MAGs) has led to a surge in genome-based discoveries of members affiliated with Archaea and Bacteria, bringing with it a need to develop guidelines for nomenclature of uncultivated microorganisms. The International Code of Nomenclature of Prokaryotes (ICNP) only recognizes cultures as 'type material', thereby preventing the naming of uncultivated organisms. In this Consensus Statement, we propose two potential paths to solve this nomenclatural conundrum. One option is the adoption of previously proposed modifications to the ICNP to recognize DNA sequences as acceptable type material; the other option creates a nomenclatural code for uncultivated Archaea and Bacteria that could eventually be merged with the ICNP in the future. Regardless of the path taken, we believe that action is needed now within the scientific community to develop consistent rules for nomenclature of uncultivated taxa in order to provide clarity and stability, and to effectively communicate microbial diversity. In this Consensus Statement, the authors discuss the issue of naming uncultivated prokaryotic microorganisms, which currently do not have a formal nomenclature system due to a lack of type material or cultured representatives, and propose two recommendations including the recognition of DNA sequences as type material.
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2.
  • Omanakuttan, Giriprasanth, et al. (author)
  • Surface emitting 1.5 mu m multi-quantum well LED on epitaxial lateral overgrowth InP/Si
  • 2020
  • In: Optical Materials Express. - : The Optical Society. - 2159-3930. ; 10:7, s. 1714-1723
  • Journal article (peer-reviewed)abstract
    • We demonstrate a surface emitting 1.5 mu m multi-quantum well (MQW) light-emitting diode (LED) on a 3-inch epitaxial lateral overgrowth (ELOG) InP/Si wafer. The enhanced crystalline quality of ELOG InP/Si is revealed by various characterization techniques, which gives rise to a MQW with high photoluminescence intensity at 1.5 mu m and interference fringes arising from the vertical Fabry-Perot cavity. The LED devices exhibited strong electroluminescence intensity that increased with pump current. Moreover, transparency current measurements indicate optical gain in the 1.5 mu m MQW on InP/Si. The results are encouraging for obtaining wafer scale 1.5 mu m surface emitting laser structures on silicon with further optimization.
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