| 1. |
- Lin, Dongxu, et al.
(author)
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Vapor Deposited Pure alpha-FAPbI(3) Perovskite Solar Cell via Moisture-Induced Phase Transition Strategy
- 2022
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In: Advanced Functional Materials. - : WILEY-V C H VERLAG GMBH. - 1616-301X .- 1616-3028. ; 32:48
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Journal article (peer-reviewed)abstract
- To fabricate stable neat FAPbI(3) perovskite with a pure alpha-phase (pure alpha-FAPbI(3)) is important in the field of photovoltaic commercialization because of its better bandgap than its alloying counterpart with cesium (Cs) or methylammonium (MA) cations. In this work, the first vapor deposited pure alpha-FAPbI(3) thin film solar cell with a power conversion efficiency (PCE) over 20% is achieved by regulating the phase transition process. It is found that under high humidity conditions, a fast phase transition between high-purity alpha- and delta-phase FAPbI(3) can be realized. Moreover, theoretical calculations interestingly reveal a phase transition shortcut induced by the abnormal volume contraction that is ascribed to the formation of double hydrogen bonds at a certain H2O concentration. Therefore, a high-humidity post-treatment strategy is proposed to fabricate alpha-FAPbI(3) solar cells with a champion PCE of 20.19% (0.1 cm(2)) and 18.91% (1 cm(2)), which is currently the highest recorded value in vapor deposited pure alpha-FAPbI(3) perovskite solar cells. This study helps to redefine the effect of a water molecule on FAPbI(3) solar cells. In addition, the demonstrated scaling-up possibility provides another perspective for fabricating uniform high-performance pure alpha-FAPbI(3) perovskite solar cells.
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| 2. |
- Zhan, Zhenye, et al.
(author)
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A Perovskite Photodetector Crossbar Array by Vapor Deposition for Dynamic Imaging
- 2022
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In: Advanced Materials. - : WILEY-V C H VERLAG GMBH. - 0935-9648 .- 1521-4095. ; 34:51
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Journal article (peer-reviewed)abstract
- With the development of perovskite photodetectors, integrating photodetectors into array image sensors is the next target to pursue. The major obstacle to integrating perovskite photodiodes for dynamic imaging is the optoelectrical crosstalk among the pixels. Herein, a perovskite photodiode-blocking diode (PIN-BD) crossbar array with pixel-wise rectifying property by the vapor deposition method is presented. The PIN-BD shows a large rectification ratio of 3.3 x 10(2) under illumination, suppressing electrical crosstalk to as small as 8.0% in the imaging array. The fast response time of 72.8 ns allows real-time image acquisition by over 25 frames per second. The imaging sensor exhibits excellent imaging capability with a large linear dynamic range of 112 dB with 4096 gray levels and weak light sensitivity under 1.2 lux.
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| 3. |
- Zhao, Lichen, et al.
(author)
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Enabling full-scale grain boundary mitigation in polycrystalline perovskite solids
- 2022
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In: Science Advances. - : American Association for the Advancement of Science. - 2375-2548. ; 8:35
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Journal article (peer-reviewed)abstract
- There exists a considerable density of interaggregate grain boundaries (GBs) and intra-aggregate GBs in polycrystalline perovskites. Mitigation of intra- aggregate GBs is equally notable to that of interaggregate GBs as intra-aggregate GBs can also cause detrimental effects on the photovoltaic performances of perovskite solar cells (PSCs). Here, we demonstrate full-scale GB mitigation ranging from nanoscale intra-aggregate to submicron-scale interaggregate GBs, by modulating the crystallization kinetics using a judiciously designed brominated arylamine trimer. The optimized GB-mitigated perovskite films exhibit reduced nonradiative recombination, and their corresponding mesostructured PSCs show substantially enhanced device efficiency and long-term stability under illumination, humidity, or heat stress. The versatility of our strategy is also verified upon applying it to different categories of PSCs. Our discovery not only specifies a rarely addressed perspective concerning fundamental studies of perovskites at nanoscale but also opens a route to obtain high-quality solution-processed polycrystalline perovskites for high-performance optoelectronic devices.
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