| 1. |
- Moon, S.J., Fournier, K.B., Scott, H., Chung, H-K, Lee, R.W.
(author)
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Optical pumping experiments in the XUV regime.
- 2003
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In: J. Quant. Spectroscopy & Radiative Transfer. ; 81, s. 311-17.
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Journal article (peer-reviewed)
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| 2. |
- Cho, C. R., et al.
(author)
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Na0.5K0.5NbO3 thin films for MFIS_FET type non-volatile memory applications
- 2002
-
In: Integrated Ferroelectrics. - 1058-4587 .- 1607-8489. ; 49, s. 21-30
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Journal article (peer-reviewed)abstract
- Na0.5K0.5NbO3(NKN) thin films have been prepared on Pt80Ir20, SiO2/Si, and Ta2O5/Si substrates for ferroelectric non-volatile memory applications. Ferroelectric hysteresis loops for Au/NKN/Pt80Ir20 vertical capacitor yielded remnant polarization of 12 muC/cm(2) and coercive field similar to20 kV/cm. Significant flat-band voltage V-FB shifts with buffer layer thickness in Au/NKN/SiO2/Si structures have been attributed to the intermixing between Na and K alkali ions and SiO2 layer. On the other hand, Au/NKN/Ta2O5/Si structure exhibited wide memory window without significant V-FB deviations, low leakage currents, and rather long retention time at zero bias.
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| 3. |
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| 4. |
- Izadifard, Morteza, 1965-, et al.
(author)
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Evaluation of optical quality and defect properties of GaNxP1−x alloys lattice matched to Si
- 2004
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 85, s. 6347-
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Journal article (peer-reviewed)abstract
- By using a variety of optical characterization techniques, including cathodoluminescence, temperature-dependent cw- and time-resolved photoluminescence (PL), and PL excitation spectroscopies, high optical quality of the GaN0.018P0.982 epilayers lattice matched to Si substrates is demonstrated and is shown to be comparable to that of the “state-of-the-art” GaNP alloys grown on GaP substrates. The growth of GaNP on Si is, however, found to facilitate the formation of several point defects, including complexes involving Ga interstitial atoms (Gai).
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| 5. |
- Koh, J. H., et al.
(author)
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Dielectric properties and Schottky barriers in silver tantalate-niobate thin film capacitors
- 2001
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In: Integrated Ferroelectrics. - 1058-4587 .- 1607-8489. ; 39:1-4, s. 1361-1368
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Journal article (peer-reviewed)abstract
- Submicron thick ferroelectric Ag(Ta,Nb)O-3 films have been pulsed laser deposited on the bulk Pt80Ir20 polycrystalline substrates. They are ferroelectric at temperatures below 125 K with the remnant polarization of 0.4 muC/cm(2) @ 77K and paraelectric at higher temperatures with tandelta @ 100 kHz as low as 0.015. Extensive I-V characterization has been performed in a wide temperature range 77 K to 350 K for vertical Me/Ag(Ta,Nb)O-3/Pt80Ir20 capacitive cells, where the metals Me = Pd, Au, Cr, and Al have been used as a top electrode. The electronic transport in thin Me/Ag(Ta,Nb)O-3/Pt80Ir20 capacitors follows the Schottky emission mechanism with the barrier height for the Pd, Au, Cr, and Al of 0.85, 0.8, 0.74, and 0.69 eV, respectively.
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| 6. |
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| 7. |
- Shepherd, R., Audebert, P., Chen, H-K, Fournier, K.B., Peyreusse, O., Moon, S., Price, D., Klein, L., Gaithier, J.C., Springer, P., Lee, R.W.
(author)
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Satellite and opacity effects on resonance line shapes produced from short-pulse laser heated foils.
- 2003
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In: J. Quant. Spectroscopy & Radiative Transfer. ; 81
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Other publication (other academic/artistic)
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| 8. |
- Thinh, N. Q., et al.
(author)
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Identification of Ga-interstitial defects in GaNyP1−y and AlxGa1−xNyP1−y
- 2004
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In: Physical Review B. Condensed Matter and Materials Physics. - : APS. - 1098-0121 .- 1550-235X. ; 70:12, s. 121201-
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Journal article (peer-reviewed)abstract
- Two Ga -interstitial (Gai) defects are identified by optically detected magnetic resonance as common grown-in defects in molecular beam epitaxial GaNyP1−y and AlxGa1−xNyP1−y. Characteristic hyperfine structure arising from spin interaction between an unpaired electron and a Ga nucleus is clearly resolved. The observed strong and nearly isotropic hyperfine interaction reveals an electron wave function of A1 symmetry that is highly localized at the Gai and thus a deep-level defect. Our analysis based on first-principles calculations suggests that these defects are complexes containing one Gai2+ .
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