| 1. |
- Kim, Seohan, et al.
(författare)
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Hydrogen-driven surface amorphization of the transparent oxide semiconductor thin-films for photovoltaic applications
- 2021
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Ingår i: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 555
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Tidskriftsartikel (refereegranskat)abstract
- Crystalline transparent conductive oxides are promising candidates as front electrodes in electronic devices due to the high electron mobility and good optical transparency in the visible region. However, the rough surface morphology resulting from the grain growth during the deposition and post-annealing process triggers severe drawbacks in their thin-film applications. Here, we demonstrate the hydrogen-driven surface amorphization of the crystalline In?Sn?O (c-ITO) thin film. By introducing hydrogen gas during the deposition process, the surface of the c-ITO thin film is selectively amorphized, allowing for the smooth surface morphology while preserving the advantages of the crystalline thin film. The progressive surface amorphization of c-ITO thin film offers the tunability of the work function, leading to the improved power conversion efficiency of the thin-film solar cell. Our work provides a facile method to realize the smooth surface morphology of the c-ITO thin films, which can be further utilized for a wide range of crystalline thin films for optoelectronic applications.
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| 2. |
- Park, Sungmin, et al.
(författare)
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Hydrogen-driven dramatically improved mechanical properties of amorphized ITO-Ag-ITO thin films
- 2021
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Ingår i: RSC Advances. - : Royal Society of Chemistry. - 2046-2069. ; 11:6, s. 3439-3444
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Tidskriftsartikel (refereegranskat)abstract
- An oxide/metal/oxide (OMO) multi-structure, which has good electrical, optical, and mechanical stability, was studied as a potential replacement of polycrystalline In-Sn-O (ITO). However, the degradation of mechanical properties caused by the polycrystalline structure of the top layer forming on the polycrystalline metal layer needs to be improved. To address this issue, we introduced hydrogen in the oxide layers to form a stabilized amorphous oxide structure despite it being deposited on the polycrystalline layer. An ITO/Ag/ITO (IAI) structure was used in this work, and we confirmed that the correct amount of hydrogen introduction can improve mechanical stability without any deterioration in optical and electrical properties. The hydrogen presence in the IAI as intended was confirmed, and the assumption was that the hydrogen suppressed the formation of microcracks on the ITO surface due to low residual stress that came from decreased subgap level defects. This assumption was clearly confirmed with the electrical properties before and after dynamic bending testing. The results imply that we can adjust not only IAI structures with high mechanical stability due to the right amount of hydrogen introduction to make stabilized amorphous oxide but also almost all oxide/metal/oxide structures that contain unintended polycrystalline structures.
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