| 1. |
- Stenman, U H, et al.
(författare)
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Summary report of the TD-3 workshop: characterization of 83 antibodies against prostate-specific antigen
- 1999
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Ingår i: Tumor Biology. - : Springer Science and Business Media LLC. - 1423-0380 .- 1010-4283. ; 20:Suppl. 1, s. 1-12
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Tidskriftsartikel (refereegranskat)abstract
- Twelve research groups participated in the ISOBM TD-3 Workshop in which the reactivity and specificity of 83 antibodies against prostate-specific antigen (PSA) were investigated. Using a variety of techniques including cross-inhibition assays, Western blotting, BIAcore, immunoradiometric assays and immunohistochemistry, the antibodies were categorized into six major groups which formed the basis for mapping onto two- and three-dimensional (2-D and 3-D) models of PSA. The overall findings of the TD-3 Workshop are summarized in this report. In agreement with all participating groups, three main antigenic domains were identified: free PSA-specific epitopes located in or close to amino acids 86-91; discontinuous epitopes specific for PSA without human kallikrein (hK2) cross-reactivity located at or close to amino acids 158-163; and continuous or linear epitopes shared between PSA and hK2 located close to amino acids 3-11. In addition, several minor and partly overlapping domains were also identified. Clearly, the characterization of antibodies from this workshop and the location of their epitopes on the 3-D model of PSA illustrate the importance of selecting appropriate antibody pairs for use in immunoassays. It is hoped that these findings and the epitope nomenclature described in this TD-3 Workshop are used as a standard for future evaluation of anti-PSA antibodies.
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| 6. |
- Hammar, M., et al.
(författare)
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Systematics of electrical conductivity across InP to GaAs wafer fused interfaces
- 1998
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Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - Tsukuba, Jpn. ; , s. 801-804
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Konferensbidrag (refereegranskat)abstract
- We report on the electrical and compositional characterization of wafer fused isotype heterojunctions between Zn, C or Si doped GaAs and Zn or Si doped InP. The junctions were characterized with current-voltage and secondary ion mass spectrometry (SIMS) measurements. It is demonstrated that very low-resistive junctions can be obtained in each case, but also that there is a strong influence from the detailed sample structure and processing conditions. SIMS was used to monitor the doping concentration across the interface as well as the impurity concentration of oxygen, carbon and iron.
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| 7. |
- Hammar, M., et al.
(författare)
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Systematics of electrical conductivity across InP to GaAs wafer-fused interfaces
- 1999
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Ingår i: Japanese Journal of Applied Physics. - 0021-4922 .- 1347-4065. ; 38:2 B, s. 1111-1114
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Tidskriftsartikel (refereegranskat)abstract
- We report on the electrical and compositional characterization of wafer-fused isotype heterojunctions between Zn-, C- or Si-doped GaAs and Zn- or Si-doped InP. The junctions were characterized by current-voltage and secondary ion mass spectrometry (SIMS) measurements. It is demonstrated that very low-resistive junctions can be obtained in each case, but also that there is a strong influence from the detailed sample structure and processing conditions. SIMS was used to monitor the doping concentration across the interface as well as the impurity concentrations of oxygen, carbon and iron. © 1999 Publication Board, Japanese Journal of Applied Physics.
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| 8. |
- Lerm, Maria, et al.
(författare)
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Deamidation of Cdc42 and Rac by Escherichia coli cytotoxic necrotizing factor 1 : activation of c-Jun N-terminal kinase in HeLa cells
- 1999
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Ingår i: Infection and Immunity. - : American Society for Microbiology. - 0019-9567 .- 1098-5522. ; 67:2, s. 496-503
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Tidskriftsartikel (refereegranskat)abstract
- Recently, Escherichia coli cytotoxic necrotizing factor 1 (CNF1) was shown to activate the low-molecular-mass GTPase RhoA by deamidation of Gln63, thereby inhibiting intrinsic and GTPase-activating protein (GAP)-stimulated GTPase activities (G. Schmidt, P. Sehr, M. Wilm, J. Selzer, M. Mann, and K. Aktories, Nature 387:725-729, 1997; G. Flatau, E. Lemichez, M. Gauthier, P. Chardin, S. Paris, C. Fiorentini, and P. Boquet, Nature 387:729-733, 1997). Here we report that in addition to RhoA, Cdc42 and Rac also are targets for CNF1 in vitro and in intact cells. Treatment of HeLa cells with CNF1 induced a transient formation of microspikes and formation of membrane ruffles. CNF1 caused a transient 10- to 50-fold increase in the activity of the c-Jun N-terminal kinase. Tryptic peptides of Cdc42 obtained from CNF1-treated cells by immunoprecipitation exhibited an increase in mass of 1 Da compared to control peptides, indicating the deamidation of glutamine 61 by the toxin. The same increase in mass was observed with the respective peptides obtained from CNF1-modified recombinant Cdc42 and Rac1. Modification of recombinant Cdc42 and Rac1 by CNF1 inhibited intrinsic and GAP-stimulated GTPase activities and retarded binding of 2'(3')-O-(N-methylanthraniloyl)GDP. The data suggest that recombinant as well as cellular Cdc42 and Rac are substrates for CNF1.
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| 9. |
- Lundqvist, P, et al.
(författare)
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mu SR study of charge neutrally doped RE(1-2X)Ca(X)Pr(X)Ba(2)Cu(3)O(7-delta) (RE=Y, Nd)
- 1996
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Ingår i: CZECHOSLOVAK JOURNAL OF PHYSICS. - : CZECHOSLOVAK JNL OF PHYSICS. - 0011-4626. ; 46, s. 1141-1142
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Pr substitution in the 123 superconductors lowers the critical temperature, T-c, drastically. Equal amounts of Ca and Pr were doped into the RE(1-2x)Ca(x)Pr(x)Ba(2)Cu(3)O(7-delta) superconductors (RE=Y, x less than or equal to 0.2 and Nd, x less than or e
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| 10. |
- Lundqvist, P, et al.
(författare)
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Neutron-diffraction studies and bond valence sums of charge neutrally doped Nd1-2xCaxThxBa2Cu3O7-delta
- 1997
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Ingår i: PHYSICAL REVIEW B-CONDENSED MATTER. - : AMER INST PHYSICS. - 0163-1829. ; 56:5, s. 2824-2830
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Equal amounts of Ca and Th have been doped into the Nd1-2xCaxThxBa2Cu3O7-delta superconductor with x = 0. 0.015. 0.03, 0.05. and 0.10. This causes a fast and linear decrease of the superconducting transition temperature, T-c. A single orthorhombic phase w
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| 11. |
- Lundqvist, P, et al.
(författare)
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Neutron-diffraction studies and interatomic distances in Ca-Pr doped NdBa2Cu3O7-delta
- 1996
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Ingår i: PHYSICA C. - : ELSEVIER SCIENCE BV. ; 269:3-4
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Sintered samples of Nd1-2xCaxPrxBa2Cu3O7-delta with x = 0, 0.025, 0.050, and 0.10 have been studied by electrical-resistivity measurements, X-ray and neutron diffraction and from calculated bond-valence sums (BVS). Doping of equal amounts of Ca-Pr suppre
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| 12. |
- Rapp, S., et al.
(författare)
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Near room-temperature continuous-wave operation of electrically pumped 1.55 ÎŒm vertical cavity lasers with InGaAsP/InP bottom mirror
- 1999
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Ingår i: Electronics Letters. - 0013-5194 .- 1350-911X. ; 35:1, s. 49-50
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Tidskriftsartikel (refereegranskat)abstract
- The first near room-temperature continuous-wave (CW) operation of a vertical cavity laser based on an epitaxial InGaAsP/InP bottom mirror is reported. The structure employs a package of nine strain compensated GaInAsP quantum wells and a wafer-fused GaAs/AlGaAs top mirror. For a 10 Όm diameter device, the threshold current is 6mA and the input threshold power is 21mW. The maximum operating temperature is 17 and 101°C for CW and pulsed conditions, respectively. © IEE 1999.
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| 13. |
- Salomonsson, P., et al.
(författare)
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Temperature-dependent performance of 1.55 ÎŒm vertical-cavity lasers with InGaAsP/InP bottom mirror
- 1999
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Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - Davos, Switz. ; :Piscataway, NJ, United States, s. 223-226
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Tidskriftsartikel (refereegranskat)abstract
- We have fabricated and evaluated a long-wavelength vertical-cavity laser (VCL) based on an epitaxially integrated InP distributed Bragg reflector (DBR) under continuous wave (CW) and pulsed conditions. We conclude that, for an InP-DBR-down configuration, the high-temperature performance is limited by the heat conductivity of the bottom mirror. The highest operating temperature for CW and pulsed condition is 17 °C and 101 °C respectively, indicating a substantial self-heating for CW. To investigate the prospect for improved performance in other mounting configurations, we have applied a two-dimensional finite element analysis to the heat transfer problem. It is suggested that for top-side-down mounting with the AlGaAs/GaAs DBR closest to the heat sink, a performance comparable to that of so called double-fused VCLs could be possible.
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