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Träfflista för sökning "WFRF:(Rorsman Niklas 1964) srt2:(2000-2004)"

Sökning: WFRF:(Rorsman Niklas 1964) > (2000-2004)

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  • Sudow, Mattias, 1980, et al. (författare)
  • Planar SiC Schottky Diodes for MMIC Applications
  • 2004
  • Ingår i: Conference Proceedings. 34th European Microwave Conference (IEEE Cat. No.04EX963). ; 1, s. 153-156
  • Tidskriftsartikel (refereegranskat)abstract
    • Planar Schottky diodes intended for SiC MMIC applications have been designed, processed and characterised. To our knowledge, this is the first article published on this type of device. The planar design is beneficial since semi-insulating substrates are used in microwave designs to minimise parasitics. The component geometry was studied and a simple distributed model was formulated. Extrinsic cut-off frequencies up to 30.8 GHz were calculated from LCR-measurements.
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  • Andersson, Kristoffer, 1976, et al. (författare)
  • Resistive SiC-MESFET mixer
  • 2002
  • Ingår i: IEEE Microwave and Wireless Components Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 1531-1309 .- 1558-1764. ; 12:4, s. 119-121
  • Tidskriftsartikel (refereegranskat)abstract
    • A single-ended silicon carbide resisitve MESFET mixer with minimum conversion loss (CL) of 10.2 dB and an input third order intercept point of 35.7 dB at 3.3 GHz was designed and characterized. A lumped-element, large-signal model was used for modeling the device. The drain-source resistance was measured by taking the real part of the output port impedence. Analysis suggested that the optimum gate bias for minimum CL was -6.7 V.
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  • Dynefors, Kristina, 1977, et al. (författare)
  • research and development of SiC Static Induction transistor
  • 2003
  • Ingår i: GHz2003 conference, Linköping 2003.
  • Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
    • A fabrication process for SiC Static Induction Transistors (SITs) is developed and tested. Simulated and measured results of the device are presented. The complete fabrication process involves only 5 lithography steps, due to the self-aligned process used for mesa, ohmic contacts and gates. This makes the process fast and minimize the risk of process errors. Only optical lithography is used in the process, why dimensions are not optimised. Mesa widths of 2, 3, 4 and 5 µm are processed. Since the process is scalable, better performance can be expected with smaller widths achieved by the use electron beam lithography. Preliminary results indicate FET operation with a maximum current density of 110 mA/mm.
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  • Lundh, Ros-Marie, et al. (författare)
  • Processing of RF-MEMS Switches
  • 2004
  • Ingår i: MEMSWAVE, June 30-July 2, 2004, Uppsala, Sweden.
  • Konferensbidrag (refereegranskat)
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  • Resultat 1-14 av 14

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