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Search: WFRF:(Schimmel H) > (2014)

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1.
  • Kaiser, M., et al. (author)
  • Nucleation and growth of polycrystalline SiC
  • 2014
  • In: IOP Conference Series. - : Institute of Physics Publishing (IOPP). ; 56:1, s. 012001-
  • Conference paper (peer-reviewed)abstract
    • The nucleation and bulk growth of polycrystalline SiC in a 2 inch PVT setup using isostatic and pyrolytic graphite as substrates was studied. Textured nucleation occurs under near-thermal equilibrium conditions at the initial growth stage with hexagonal platelet shaped crystallites of 4H, 6H and 15R polytypes. It is found that pyrolytic graphite results in enhanced texturing of the nucleating gas species. Reducing the pressure leads to growth of the crystallites until a closed polycrystalline SiC layer containing voids with a rough surface is developed. Bulk growth was conducted at 35 mbar Ar pressure at 2250°C in diffusion limited mass transport regime generating a convex shaped growth form of the solid-gas interface leading to lateral expansion of virtually [001] oriented crystallites. Growth at 2350°C led to the stabilization of 6H polytypic grains. The micropipe density in the bulk strongly depends on the substrate used.
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2.
  • Schimmel, S., et al. (author)
  • The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
  • 2014
  • In: IOP Conference Series. - : Institute of Physics Publishing (IOPP). ; 56:1, s. 012002-
  • Conference paper (peer-reviewed)abstract
    • Donor-acceptor co-doped SiC is a promising light converter for novel monolithic all-semiconductor white LEDs due to its broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides sufficiently high doping concentrations in an appropriate ratio yielding short radiative lifetimes, long nonradiative lifetimes are crucial for efficient light conversion. The impact of different types of defects is studied by characterizing fluorescent silicon carbide layers with regard to photoluminescence intensity, homogeneity and efficiency taking into account dislocation density and distribution. Different doping concentrations and variations in gas phase composition and pressure are investigated.
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