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- Regesch, David, et al.
(author)
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Degradation and passivation of CuInSe2
- 2012
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 101:11, s. 112108-
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Journal article (peer-reviewed)abstract
- The degradation of CuInSe2 absorbers in ambient air is observed by the decay of the quasi-Fermi level splitting under well defined illumination with time. The decay is faster and stronger in absorbers with [Cu]/[In]<1 than in ones with a higher ratio. It can be attributed to the oxidation of the sample. Epitaxial films containing no Na show very similar trends, indicating that decay and oxidation are independent of the Na content. A standard CdS layer commonly used as buffer in solar cells, terminates the decay even over many months. Aged absorbers can be completely restored by a KCNetch.
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- Siebentritt, Susanne, et al.
(author)
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The electronic structure of chalcopyrites-bands, point defects and grain boundaries
- 2010
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In: Progress in Photovoltaics. - : Wiley. - 1062-7995 .- 1099-159X. ; 18:6, s. 390-410
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Journal article (peer-reviewed)abstract
- We summarize the progress made recently in understanding the electronic structure of chalcopyrites. New insights into the dispersion of valence and conduction band allow conclusions on the effective masses of charge carriers and their orientation dependence, which influences the transport in solar cell absorbers of different orientation. Native point defects are responsible for the doping and thus the band bending in solar cells. Results of optoelectronic defect spectroscopy are reviewed. Native defects are also the source for a number of metastabilities, which strongly affect the efficiency of solar cells. Recent theoretical findings relate these effects to the Se vacancy and the In-Cu antisite defect. Experimentally determined activation energies support these models. Absorbers in chalcopyrite solar cells are polycrystalline, which is only possible because of the benign character of the grain boundaries. This can be related to an unusual electronic structure of the GB.
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- Steichen, Marc, et al.
(author)
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Preparation of CuGaSe 2 absorber layers for thin film solar cells by annealing of efficiently electrodeposited Cu–Ga precursor layers from ionic liquids
- 2011
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In: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 519:21, s. 7254-7258
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Journal article (peer-reviewed)abstract
- CuGaSe2 absorber layers were prepared on molybdenum substrates by electrochemical codeposition of copper and gallium and subsequential annealing in selenium vapour. The electrodeposition was made from a deep eutectic based ionic liquid consisting of choline chloride/urea (Reline) with a plating efficiency of over 85%. The precursor film composition is controlled by the ratio of the copper to gallium fluxes under hydrodynamic conditions and by the applied deposition potential. X-ray diffraction reveals CuGa2 alloying during the electrodeposition and CuGaSe2 formation after annealing. Photoluminescence (PL) and photocurrent spectroscopy revealed the good opto-electronic properties of the CuGaSe2 absorber films. The absorber layers have been converted to full devices with the best device achieving 4.0 % solar conversion efficiency.
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