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- Duda, LC, et al.
(author)
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Density of states, hybridization, and band-gap evolution in AlxGa1-xN alloys
- 1998
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In: PHYSICAL REVIEW B-CONDENSED MATTER. - : AMERICAN PHYSICAL SOC. - 0163-1829. ; 58:4, s. 1928-1933
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Journal article (other academic/artistic)abstract
- The electronic structure of the wurtzite AlxGa1-xN alloy system has been studied for numerous values of Al concentration x ranging from 0 (pure GaN) to 1 (pun AlN). The occupied and unoccupied partial density of states was measured for each alloy using sy
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3. |
- Smith, KE, et al.
(author)
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Soft x-ray emission studies of the bulk electronic structure of AlN, GaN, and Al0.5Ga0.5N
- 1998
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In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. - : AMER INST PHYSICS. - 1071-1023. ; 16:4, s. 2250-2253
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Journal article (other academic/artistic)abstract
- The electronic structure of wurtzite GaN, Al0.5Ga0.5N, and AlN has been studied using synchrotron radiation excited soft x-ray emission spectroscopy. In particular, the elementally resolved partial densities of states has been measured and found to agree
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4. |
- Stagarescu, CB, et al.
(author)
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Electronic structure of GaN measured using soft-x-ray emission and absorption
- 1996
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In: PHYSICAL REVIEW B-CONDENSED MATTER. - : AMER INST PHYSICS. - 0163-1829. ; 54:24, s. 17335-17338
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Journal article (other academic/artistic)abstract
- The electronic structure of thin-film wurtzite GaN has been studied using a combination of soft-x-ray absorption and emission spectroscopies. We have measured the elementally and orbitally resolved GaN valence and conduction bands by recording Ga L and N
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