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1.	Edholm, Bengt, et al. (author) Reliability Evaluation of Manufacturing Processes for Bipolar and MOS Devices on Silicon-On-Diamond Materials 1996 In: J Electrochem Soc. ; 143:4, s. 1326-1334 Journal article (peer-reviewed)
2.	Ljungberg, K, et al. (author) Spontaneity of hydrophobic Si-Si bonding, and properties of the bonded interfaces 1993 In: Proc of the 2nd International Symposium on Semiconductor Wafer Bonding. The Electrochemical Society. ; 93:29, s. 473- Conference paper (peer-reviewed)
3.	Ljungberg, Karin, et al. (author) The effects of HF-cleaning prior to silicon wafer bonding 1995 In: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 142:4, s. 1297-1303 Journal article (peer-reviewed)
4.	Ljungberg, Karin, et al. (author) Characterization Of Spontaneously Bonded Hydrophobic Silicon Surfaces 1994 In: Journal Of The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 141:2, s. 562-566 Journal article (peer-reviewed)
5.	Ljungberg, Karin, et al. (author) Formation of directly bonded Si/Si interfaces in ultra-high vacuum 1997 In: Applied Surface Science. ; 117, s. 813-819, s. 813- Journal article (peer-reviewed)
6.	Afanasev, V. V., et al. (author) Wafer Bonding Induced Degradation Of Thermal Silicon Dioxide Layers On Silicon 1995 In: Applied Physics Letters. ; 66:13, s. 1653-1655 Journal article (peer-reviewed)
7.	Bengtsson, Stefan, 1961, et al. (author) Applications of aluminium nitride films deposited by reactive sputtering to silicon-on-insulator materials 1996 In: Japanese Journal of Applied Physics. - 1347-4065 .- 0021-4922. ; 35:8R, s. 4175-4181 Journal article (peer-reviewed)
8.	Bengtsson, Stefan, 1961, et al. (author) Characterisation of interface electron state distributions at directly bonded silicon/silicon interfaces 1990 In: ESSDERC 90. 20th European Solid State Device Research Conference. ; , s. 1- Conference paper (peer-reviewed)abstract Measurement methods for characterizing the electrical properties of directly bonded Si/Si n/n-type or p/p-type interfaces are presented. The density of interface states in the bandgap of the semiconductor and the density of interface charges at the bonded interface are determined from measurements of current and capacitance vs. applied voltage
9.	Bengtsson, Stefan, 1961 (author) Characterization of thin SOI layers 1995 In: Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications. ; , s. 221- Conference paper (peer-reviewed)abstract Silicon-on-insulator materials still suffer from imperfect electrical and crystalline quality and a spread in performance is observed. Viable characterization techniques are necessary to advance the quality of the materials. This paper gives an overview of characterization methods for silicon-on-insulator materials. Different techniques, both destructive and nondestructive, for determination of silicon and silicon dioxide film thicknesses, structural defects and impurities are reviewed. The potentials and limits of different techniques for silicon-on-insulator material characterization are discussed and some examples of results are given primarily for silicon-on-insulator materials formed by wafer bonding
10.	Bengtsson, Stefan, 1961, et al. (author) Charge carrier injection into the buried oxide of wafer bonded silicon-on-insulator materials 1994 In: Proc. 6th International Symposium on Silicon-On-Insulator Technology and Devices. The Electrochemical Society.. ; 94:11, s. 245- Journal article (peer-reviewed)

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Type of publication: journal article (32); conference paper (19); editorial collection (1); doctoral thesis (1)

Type of content: peer-reviewed (52); other academic/artistic (1)

Author/Editor: Bengtsson, Stefan, 1 ... (53); Engström, Olof, 1943 (15); Ericsson, Per, 1968 (13); Jauhiainen, Anders, ... (10); Ljungberg, Karin (8); Andersson, Mats O., ... (6); show more...; Bergh, Mats, 1968 (6); Södervall, Ulf, 1954 (6); Soderbarg, Anders (5); Edholm, Bengt (3); Söderbärg, Anders (3); Grey, Francois (3); Andersson, G (2); Jansson, Ulf (2); Choumas, Manolis, 19 ... (2); Mitani, K (2); Hermansson, Karin (2); Skarp, Jarmo (2); Weber, J. (1); Abe, T. (1); Olsson, Jörgen (1); Afanasev, V. V. (1); Olesen, Christian (1); Johansson, Mikael (1); Sveinbjörnsson, Eina ... (1); Jeppson, Kjell, 1947 (1); Bergh, M. (1); Bäcklund, Ylva (1); Abe, Takao (1); Jauhiainen, A (1); Tiensuu, Stefan (1); Maszara, W. P. (1); Olesen, C. (1); Litwin, A. (1); Vedde, Jan (1); Ljungberg, K (1); Keskitalo, N. (1); Kanniainen, T. (1); Westberg, David (1); Ragnarsson, Lars-Åke ... (1); Pickrell, David (1); Hoover, David (1); Andersson, M O (1); show less...

University: Chalmers University of Technology (53); Uppsala University (4)

Language: English (53)

Research subject (UKÄ/SCB): Engineering and Technology (53)

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