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Theory of a room-te...
Theory of a room-temperature silicon quantum dot device as a sensitive electrometer
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- Jeppson, Kjell, 1947 (author)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Gothenburg,Chalmers tekniska högskola,Chalmers University of Technology,University of Göteborg and Chalmers University of Technology,Physical Electron. Photonics Group, University of Göteborg, Chalmers University of Technology, S-412 96 Göteborg, Sweden,Solid State Electronics Group, Department of Microelectronics, Chalmers University of Technology, S-412 96 Göteborg, Sweden
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- Narayan, V. (author)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),Chalmers tekniska högskola,Chalmers University of Technology,University of Gothenburg,University of Göteborg and Chalmers University of Technology,Physical Electron. Photonics Group, University of Göteborg, Chalmers University of Technology, S-412 96 Göteborg, Sweden
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- Pettersson, Håkan, 1962- (author)
- Högskolan i Halmstad,Halmstad Embedded and Intelligent Systems Research (EIS),Halmstad University
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- Willander, Magnus, 1948 (author)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Gothenburg,Chalmers tekniska högskola,Chalmers University of Technology,University of Göteborg and Chalmers University of Technology,Physical Electron. Photonics Group, University of Göteborg, Chalmers University of Technology, S-412 96 Göteborg, Sweden
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- Jeppson, K. (author)
- Solid State Electronics Group, Department of Microelectronics, Chalmers University of Technology, S-412 96 Göteborg, Sweden
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- Bengtsson, Lars, 1958 (author)
- Department of Computer Engineering, Sch. of Electrical and Comp. Eng., Chalmers University of Technology, S-412 96 Göteborg, Sweden,Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- Melville, NY : American Institute of Physics (AIP), 2004
- 2004
- English.
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In: Journal of Applied Physics. - Melville, NY : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 95:1, s. 323-326
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Abstract
Subject headings
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- We consider theoretically the use of a room-temperature silicon quantum dot based device for electrometer applications. The low power device includes two split gates that quantize the electronic energy levels in the emitter and collector regions. The base consists of a silicon quantum dot buried in silicon dioxide. The small size of the dotand quantization of the states in the leads combined to allow the device to operate at room temperature. The nonlinear current-voltage characteristics can be significantly altered by small changes to the potential of the split gates. Power dissipation in the device therefore changes with the split gate voltage, and this can be exploited in electrometerapplications. A simple model of the power dissipated when the device is part of a microwave resonant inductor-resistor-capacitor tank circuit suggests that large changes indevice power can be achieved by changing the gate voltage, thereby forming a measurable signal. We also demonstrate that the power dissipation in the device changes as the base width is varied, and that the current through the device increases exponentially with a decrease in base width. (©2004 American Institute of Physics)
Subject headings
- NATURVETENSKAP -- Kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences (hsv//eng)
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Electrometer
- Energy levels
- Silicon
- Temperature
- Quantum dots
- TECHNOLOGY
Publication and Content Type
- ref (subject category)
- art (subject category)
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