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Magnetoresistance s...
Magnetoresistance studies on CoAl OX Au and CoAl OX NiAu tunnel structures
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- Liu, Ruisheng S. (author)
- Lund University,Lunds universitet,Högskolan i Halmstad,Tillämpad matematik och fysik (CAMP),Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Lund University, Lund, Sweden
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- Canali, Carlo M. (author)
- Högskolan i Kalmar,Naturvetenskapliga institutionen,Kalmar University, Kalmar, Sweden
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- Samuelson, Lars (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Pettersson, Håkan (author)
- Högskolan i Halmstad,Tillämpad matematik och fysik (CAMP)
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(creator_code:org_t)
- New York : American Institute of Physics (AIP), 2008
- 2008
- English.
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In: Applied Physics Letters. - New York : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 93:20, s. 203107-203107-3
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Abstract
Subject headings
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- We report on magnetoresistance (MR) studies on CoAl OX Au and CoAl OX NiAu magnetic tunnel junctions. In spite of the fact that the difference between the two samples is merely a 3 nm thick Ni layer, there is a sharp contrast in MR behavior indicating that the electronic structure at the interface between the ferromagnetic electrodes and the insulating barrier dominates the MR signal. The former sample exhibits a clear tunneling anisotropic MR (TAMR), with the characteristic correlation between resistance and current direction, in contrast to the latter sample which displays a conventional tunneling MR (TMR) dominated by the relative orientation between the magnetization directions of the two electrodes. In addition, the TAMR has a much stronger temperature dependence than the TMR, indicating a much faster drop-off of the tunneling density of states anisotropy than the tunneling electron spin polarization with increasing temperature. Finally, we propose a possible simple way to distinguish TAMR from normal TMR by measuring the resistance of the device at different angles of the external magnetic field. 2008 American Institute of Physics.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Tunnel junctions
- Anisotropy
- Coal
- Coal industry
- Electric resistance
- Electrodes
- Electronic structure
- Magnetic field effects
- Magnetic fields
- Magnetoelectronics
- Magnetoresistance
- Semiconductor junctions
- Spin dynamics
- Tunneling (excavation)
- Tunnels
- Physics
- Fysik
- nickel
- magnetisation
- tunnelling magnetoresistance
- magnetic thin films
- gold
- ferromagnetic materials
- polarisation
- electron spin
- cobalt
- aluminium compounds
- band structure
- Fysik
Publication and Content Type
- ref (subject category)
- art (subject category)
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