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Electronic structur...
Electronic structure of (Ga,Mn)As revisited
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- Kanski, Janusz, 1946 (author)
- Chalmers University of Technology,Chalmers University of Technology, Göteborg, Sweden,Chalmers, Dept Appl Phys, SE-41296 Gothenburg, Sweden.
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- Ilver, Lars, 1949 (author)
- Chalmers University of Technology,Chalmers University of Technology, Göteborg, Sweden,Chalmers, Dept Appl Phys, SE-41296 Gothenburg, Sweden.
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- Karlsson, Krister, 1961- (author)
- Högskolan i Skövde,Institutionen för ingenjörsvetenskap,Forskningscentrum för Virtuella system,Fysik och matematik,University of Skövde,Univ Skovde, Dept Engn Sci, SE-54128 Skovde, Sweden.
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- Ulfat, Intikhab (author)
- Department of Physics, University of Karachi, Pakistan,University of Karachi,Univ Karachi, Dept Phys, Karachi 75270, Pakistan.
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- Leandersson, Mats (author)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory,MAX IV Laboratory, Lund University, Lund, Sweden,Lund Univ, MAX Lab 4, SE-22100 Lund, Sweden.
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- Sadowski, Janusz (author)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory,MAX-IV laboratory, Lund University, Lund, Sweden / Institute of Physics, Polish Academy of Sciences, Warszawa, Poland,Lund Univ, MAX Lab 4, SE-22100 Lund, Sweden.;Polish Acad Sci, Inst Phys, Al Lotnikow 32-46, PL-02668 Warsaw, Poland.
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- Di Marco, Igor (author)
- Uppsala universitet,Uppsala University,Department of Physics and Astronomy, Uppsala University, Uppsala, Sweden,Materialteori
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(creator_code:org_t)
- 2017-02-02
- 2017
- English.
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In: New Journal of Physics. - : Institute of Physics (IOP). - 1367-2630. ; 19:2, s. 1-8
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Abstract
Subject headings
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- The detailed nature of electronic states mediating ferromagnetic coupling in dilute magnetic semiconductors, specifically (Ga,Mn)As, has been an issue of long debate. Two confronting models have been discussed emphasizing host band vs. impurity band carriers. Using angle resolved photoemission we show that the electronic structure of the (Ga,Mn)As system is significantly modified from that of GaAs throughout the valence band. Close to the Fermi energy, the presence of Mn induces a strong mixing of the bulk bands of GaAs, which results in the appearance of a highly dispersive band in the gap region of GaAs.For Mn concentrations above 1% the band reaches the Fermi level, and can thus host the delocalized holes needed for ferromagnetic coupling. Overall, our data provide a firm evidence of delocalized carriers belonging to the modified host valence band.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Keyword
- Dilute magnetic semiconductors
- band structure
- magnetic coupling
- Fysik och matematik
- Physics and Mathematics
- dilute magnetic semiconductors, band structure, magnetic coupling
Publication and Content Type
- ref (subject category)
- art (subject category)
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