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Final-state effects...
Final-state effects in photoemission from metal-semiconductor interfaces
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- Karlsson, Krister, 1961- (författare)
- Chalmers University of Technology, Göteborg, Sweden
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- Nyqvist, O. (författare)
- Chalmers University of Technology, Göteborg, Sweden
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- Kanski, J. (författare)
- Chalmers University of Technology, Göteborg, Sweden
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(creator_code:org_t)
- 1991-07-08
- 1991
- Engelska.
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Ingår i: Physical Review Letters. - : American Physical Society. - 0031-9007 .- 1079-7114. ; 67:2, s. 236-239
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- In this Letter we stress the importance of final-state effects in photoelectron spectroscopy. In particular, we address the problem of Schottky-barrier formation, as studied via core-level shifts in photoemission. We have calculated the shift of the core-level distribution when a semiconductor surface is covered with a metal, using a wave-vector-dependent image-screening model. We conclude that final-state effects, which are generally neglected in this context, are in fact quite important. This conclusion is supported by experimental observations reported in the literature. © 1991 The American Physical Society.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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