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Cu(In,Ga)Se2 Films with Branched Nanorod Architectures Fabricated by Economic and Environmentally Friendly Pulse-Reverse Electrodeposition Route

Mandati, Sreekanth (author)
Centre for Solar Energy Materials, International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Balapur P. O., Hyderabad, Telangana 500005, India; Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502285, India
Dey, Suhash R. (author)
Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502285, India
Joshi, Shrikant V., 1960- (author)
Högskolan Väst,Avdelningen för avverkande och additativa tillverkningsprocesser (AAT),PTW
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Bulusu, Sarada. V. (author)
Centre for Solar Energy Materials, International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Balapur P. O., Hyderabad, Telangana 500005, India
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Centre for Solar Energy Materials, International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Balapur P O., Hyderabad, Telangana 500005, India; Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502285, India Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502285, India (creator_code:org_t)
2018-09-20
2018
English.
In: ACS Sustainable Chemistry and Engineering. - : American Chemical Society. - 2168-0485. ; 6:11, s. 13787-13796
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Cu(In,Ga)Se2 (CIGS) materials are one of the most promising solar cell technologies owing to their large absorption coefficient and tunable direct bandgap, and they have gained considerable commercial maturity. The study herein puts forward the preparation of nanostructured CIGS films containing branched nanorod architectures, which is reported for the first time. The process employs an economic pulse-reverse electrodeposition technique by utilizing the fundamentals of electro-reduction and oxidation to fabricate nanostructured CIGS and completely avoids conventional energy-intensive high-temperature annealing/selenization step. Comprehensive characterization of nanoarchitectured films reveals the stoichiometric composition and chalcopyrite structure with dominant (112) orientation. Nanostructured CIGS exhibits excellent photoactivity with a photocurrent density of 4.31 mA/cm2 at -0.13 V vs RHE in a liquid junction, which is highest for a bare CIGS film and is attributable to its inherent high interface area and better charge transport properties compared to planar films. The ability to produce such efficient nanostructures using an economic, scalable, sustainable, and eco-friendly approach can considerably reduce fabrication costs compared with existing high-temperature bulk material preparation methods. © 2018 American Chemical Society.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Bearbetnings-, yt- och fogningsteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Manufacturing, Surface and Joining Technology (hsv//eng)

Keyword

Copper indium gallium selenide
Nanostructured films
Photoelectrochemical cells
Pulse-reverse electrodeposition
Solar cells
Copper compounds
Electrodeposition
Electrodes
Fabrication
Gallium compounds
Indium compounds
Layered semiconductors
Nanorods
Nanostructured materials
Chalcopyrite structures
Gallium selenides
High-temperature annealing
Large absorption coefficient
Solar cell technology
Stoichiometric compositions
Film preparation
Produktions- och materialteknik
Manufacturing and materials engineering

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