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Unipolar Drift-Diff...
Unipolar Drift-Diffusion Simulation of S-Shaped Current-Voltage Relations for Organic Semiconductor Devices
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- Fuhrmann, Jürgen (author)
- Weierstrass Institute, DEU
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- Hai Doan, Duy (author)
- m4sim GmbH, DEU
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- Glitzky, Annegret (author)
- Weierstrass Institute, DEU
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- Liero, Matthias (author)
- Weierstrass Institute, DEU
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- Nika, Grigor (author)
- Weierstrass Institute, DEU
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(creator_code:org_t)
- 2020-06-10
- 2020
- English.
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In: Finite Volumes for Complex Applications IX - Methods, Theoretical Aspects, Examples. FVCA 2020. - Cham : Springer. - 9783030436506 - 9783030436513 ; , s. 625-633
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- We discretize a unipolar electrothermal drift-diffusion model for organic semiconductor devices with Gauss–Fermi statistics and charge carrier mobilities having positive temperature feedback. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and use a finite volume based generalized Scharfetter-Gummel scheme. Applying path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, only recently observed experimentally.
Subject headings
- NATURVETENSKAP -- Matematik -- Beräkningsmatematik (hsv//swe)
- NATURAL SCIENCES -- Mathematics -- Computational Mathematics (hsv//eng)
Keyword
- Matematik
- Mathematics
Publication and Content Type
- ref (subject category)
- kap (subject category)
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