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Metal work-function...
Metal work-function and doping-concentration dependent barrier height of Ni-contacts to 4H-SiC with metal-embedded nano-particles
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Kang, M. -S (författare)
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Lee, J. -H (författare)
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- Hallén, Anders (författare)
- KTH,Integrerade komponenter och kretsar
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- Zetterling, Carl-Mikael (författare)
- KTH,Integrerade komponenter och kretsar
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Bahng, W. (författare)
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Kim, N. -K (författare)
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Koo, S. -M (författare)
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(creator_code:org_t)
- Trans Tech Publications Inc. 2012
- 2012
- Engelska.
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Ingår i: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. - 9783037854198 ; 717-720, s. 857-860
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Ämnesord
Stäng
- We investigated the effect of the metal work-function and doping concentration on the barrier height of Ni-contacts with embedded nano-particles (NPs) on 4H-SiC surfaces. Both n-type epitaxial layers with N-D=1x10(16) cm(-3), and layers doped by phosphorus implantation to a doping concentration of similar to 1x10(19) cm(-3) are used. The barrier height is reduced with increasing doping concentration and the silver (Ag) nano-particles (R similar to 18.5 nm) further enhance the local electric field of the electrical contacts to 4H-SiC in comparison to gold (Au) nano-particles (R similar to 20.2 nm). In the case of ion-implanted samples, the barrier height of the fabricated SiC diode structures with embedded Ag-NPs was significantly reduced by similar to 0.09 eV and similar to 0.25 eV compared to the samples with Au-NPs and the sample without NPs, respectively.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Barrier height
- Metal contact
- Nano-particles
- Tung's model
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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