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Future high tempera...
Future high temperature applications for SiC integrated circuits
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- Zetterling, Carl-Mikael (author)
- KTH,Integrerade komponenter och kretsar
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- Lanni, Luigia (author)
- KTH,Integrerade komponenter och kretsar
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- Ghandi, Reza (author)
- KTH,Integrerade komponenter och kretsar
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- Malm, B. Gunnar (author)
- KTH,Integrerade komponenter och kretsar
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- Östling, Mikael (author)
- KTH,Integrerade komponenter och kretsar
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(creator_code:org_t)
- 2012-05-14
- 2012
- English.
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In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley-VCH Verlag. - 1610-1634 .- 1610-1642. ; 9:7, s. 1647-1650
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- The main advantage of SiC is its high critical field for breakdown. This leads to much lower on-resistance for high voltage devices compared to silicon, but at a higher price that has to be offset by system gains. However, it is not straightforward to exploit this advantage, which is clear from the many different device types that are presently being commercialized. There are other advantages of SiC yet to be fully investigated: the possibility of high temperature operating electronics and radiation hard devices. If integrated circuits in SiC are also available, the system advantage is larger. Here temperature ranges higher than that of SOI should be aimed at, and some of these new application areas will be described. An overview of IC research will be ended with a description of our selected technology operated at 300 °C.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- High temperature
- Integrated circuit
- Radiation hardness
- Silicon carbide
Publication and Content Type
- ref (subject category)
- art (subject category)
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