Characterization of Ni(Si,Ge) films on epitaxial SiGe(100) formed by microwave annealing

• Microwave annealing (MWA) is investigated as an alternative technique to rapid thermal processing with halogen lamp heating (RTP) for low-temperature silicide formation on epitaxially grown Si0.81Ge0.19 layers. Phase formation, resistivity mapping, morphology analysis, and composition evaluation indicate that the formation of low-resistivity NiSi1-xGex by means of MWA occurs at temperatures about 100 degrees C lower than by RTP. Under similar annealing conditions, more severe strain relaxation and defect generation are therefore found in the remaining Si0.81Ge0.19 layers treated by MWA. Although silicidation by microwave heating is in essence also due to thermal effects, details in heating mechanisms differ from RTP.

Subject headings

NATURVETENSKAP  -- Fysik -- Annan fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Other Physics Topics (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Strained Silicon

Temperature

Si1-Xgex

Si

Transistors

Technology

Defects

Layers

Nisi2

Electronics

Engineering Science with specialization in Electronics

Publication and Content Type

ref (subject category)

art (subject category)