Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices

• We report the realization of four distinct magnetic states using single layers of Fe at room temperature. When the Fe film was grown on the vicinal surface of GaAs, the fourfold-symmetric magnetization along crystallographic direction give rise to four distinct Hall resistance values due to the different combination of planar and anomalous Hall effects for the given direction. Each Hall resistance state can be written reproducibly by the sequence of field pulses and was remained constant at the written state for more than 2 h, which brings the idea of a quaternary memory device much closer to practical implementation. © 2009 American Institute of Physics.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Anomalous Hall effects

Crystallographic directions

Fe films

Field pulse

GaAs

Hall resistance

Magnetic state

Memory device

Practical implementation

Room temperature

Single layer

Vicinal surface

Hall effect

Metallic films

Magnetic field effects

Publication and Content Type

ref (subject category)

art (subject category)