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Transition from sil...
Transition from silicon nanowires to isolated quantum dots : Optical and structural evolution
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- Bruhn, Benjamin (author)
- KTH,Materialfysik, MF
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Valenta, Jan (author)
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- Sychugov, Ilya (author)
- KTH,Materialfysik, MF
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Mitsuishi, Kazutaka (author)
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- Linnros, Jan (author)
- KTH,Materialfysik, MF
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(creator_code:org_t)
- American Physical Society, 2013
- 2013
- English.
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In: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X. ; 87:4, s. 045404-
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https://kth.diva-por... (primary) (Raw object)
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Abstract
Subject headings
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- The evolution of the structural and optical properties of a silicon core in oxidized nanowalls is investigated as a function of oxidation time. The same individual nanostructures are characterized after every oxidation step in a scanning electron microscope and by low-temperature photoluminescence, while a representative sample is also imaged in a transmission electron microscope. Analysis of a large number of recorded single-dot spectra and micrographs allows to identify delocalized and localized exciton emission from a nanowire as well as confined exciton emission of a nanocrystal. It is shown how structural transitions from one-to zero-dimensional confinement affect single-nanostructure optical fingerprints.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Keyword
- Self-Limiting Oxidation
- Electron-Phonon
- Si Nanocrystals
- Photoluminescence
- Cells
Publication and Content Type
- ref (subject category)
- art (subject category)
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