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Dislocation bias fa...
Dislocation bias factors in fcc copper derived from atomistic calculations
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- Chang, Zhongwen, 1985- (author)
- KTH,Reaktorfysik
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- Olsson, Pär (author)
- KTH,Reaktorfysik
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Terentyev, Dmitry (author)
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- Sandberg, Nils (author)
- KTH,Reaktorfysik
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(creator_code:org_t)
- Elsevier, 2013
- 2013
- English.
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In: Journal of Nuclear Materials. - : Elsevier. - 0022-3115 .- 1873-4820. ; 441:1-3, s. 357-363
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http://dx.doi.org/10...
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https://kth.diva-por... (primary) (Raw object)
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https://doi.org/10.1...
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Abstract
Subject headings
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- Atomistic calculations were employed in order to calculate the interaction energy of an edge dislocation with different point defects. The bias factor was calculated by applying a finite element method on the interaction energy landscapes obtained from the atomistic calculations. A comparison of the calculated bias factor with a model based on elasticity theory reveals around 30% discrepancy under conditions representative for electron irradiation at 600 degrees C. Possible reasons are discussed. The bias factor dependence on dislocation density and ambient temperature is presented and discussed.
Subject headings
- NATURVETENSKAP -- Fysik -- Atom- och molekylfysik och optik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Atom and Molecular Physics and Optics (hsv//eng)
Keyword
- Atomistic calculations
- Bias factor
- Dislocation densities
- Elasticity theory
- Interaction energies
- Model-based OPC
Publication and Content Type
- ref (subject category)
- art (subject category)
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