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Minority current distribution in InGaAs/GaAs transistor-vertical-cavity surface-emitting laser

Xiang, Yu (author)
KTH,Integrerade komponenter och kretsar
Yu, Xingang (author)
KTH,Integrerade komponenter och kretsar
Berggren, Jesper (author)
KTH,Integrerade komponenter och kretsar
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Zabel, Thomas (author)
KTH,Integrerade komponenter och kretsar
Hammar, Mattias (author)
KTH,Integrerade komponenter och kretsar
Akram, Muhammed Nadeem (author)
University Collage Vestfold
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 (creator_code:org_t)
American Institute of Physics (AIP), 2013
2013
English.
In: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 102:19, s. 191101-
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • We compare experimental data with three-dimensional numerical calculations of the local minority current in an InGaAs/GaAs transistor vertical-cavity surface-emitting laser at different bias levels. It is demonstrated that lateral potential variations within the device greatly affect the transistor operating conditions. As a result, it locally operates in the active mode in the center of the device, allowing for efficient stimulated recombination, while it globally operates in the saturation regime as reflected by the measured current-voltage characteristics. This allows for excellent laser performance, including mW-range output power, sub-mA threshold base current, and continuous-wave operation well above room temperature.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

current distribution
gallium arsenide
heterojunction bipolar transistors
III-V semiconductors
indium compounds
integrated optoelectronics
laser beams
laser cavity resonators
laser modes
numerical analysis
optical saturation
quantum wells
surface emitting lasers

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ref (subject category)
art (subject category)

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Xiang, Yu
Yu, Xingang
Berggren, Jesper
Zabel, Thomas
Hammar, Mattias
Akram, Muhammed ...
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ENGINEERING AND TECHNOLOGY
ENGINEERING AND ...
and Electrical Engin ...
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Applied Physics ...
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Royal Institute of Technology

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