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Al+ implanted 4H-SiC :
Al+ implanted 4H-SiC : Improved electrical activation and ohmic contacts
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Nipoti, R. (author)
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- Hallén, Anders (author)
- KTH,Integrerade komponenter och kretsar
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Parisini, A. (author)
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Moscatelli, F. (author)
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Vantaggio, S. (author)
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(creator_code:org_t)
- Trans Tech Publications Inc. 2013
- 2013
- English.
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In: Silicon Carbide and Related Materials 2012. - : Trans Tech Publications Inc.. - 9783037856246 ; , s. 767-772
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Subject headings
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- The p-type doping of high purity semi-insulating 4H-SiC by Al+ ion implantation and a conventional thermal annealing of 1950 °C/5 min has been studied for implanted Al concentration in the range of 1 ×1019 - 8 × 1020 cm-3 and 0.36 um thickness of the implanted layer. Sheet resistance in the range of 1.6 × 104 to 8.9 × 102 ω, corresponding to a resistivity in the range of 4.7 × 10-1 to 2.7 × 10-2 ωcm for increasing Al concentration have been obtained. Hall carrier density and mobility data in the temperature range of 140 - 600 K feature the transition from a valence band to an intra-band conduction for increasing Al concentration. In addition, the specific contact resistance of Ti/Al contacts on the 5 ×1019 cm-3 Al implanted specimen features a thermionic field effect conduction with a specific contact resistance in the 10-6 ωcm2 decade.
Keyword
- 4H-SiC
- Aluminum doping
- Hall carriers
- Hall mobility
- Ion implantation
- Ohmic contacts
Publication and Content Type
- ref (subject category)
- kon (subject category)
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