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Defect reduction in...
Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth
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- Junesand, Carl (author)
- KTH,Halvledarmaterial, HMA,KTH Royal Institute Technology, Sweden
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- Gau, Ming-Horn (author)
- KTH,Halvledarmaterial, HMA,KTH Royal Institute Technology, Sweden National Sun Yat Sen University, Taiwan
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- Sun, Yanting (author)
- KTH,Halvledarmaterial, HMA
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- Lourdudoss, Sebastian (author)
- KTH,Halvledarmaterial, HMA,KTH Royal Institute Technology, Sweden
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- Lo, Ikal (author)
- National Sun Yat Sen University, Taiwan
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- Jimenez, Juan (author)
- University of Valladolid, Spain
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- Aitor Postigo, Pablo (author)
- Institute Microelect Madrid, Spain
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- Miguel Morales, Fransisco (author)
- University of Cadiz, Spain
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- Hernandez, Jesus (author)
- University of Cadiz, Spain
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- Molina, Sergio (author)
- University of Cadiz, Spain
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- Abdessamad, Aouni (author)
- Fac Science and Technical Tanger, Morocco
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- Pozina, Galia (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Hultman, Lars (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Pirouz, Pirouz (author)
- Case Western Reserve University, OH 44106 USA
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- Sun, Yan-Ting (author)
- KTH Royal Institute Technology, Sweden
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(creator_code:org_t)
- American Scientific Publishers, 2014
- 2014
- English.
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In: Materials Express. - : American Scientific Publishers. - 2158-5849 .- 2158-5857. ; 4:1, s. 41-53
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- Epitaxial lateral overgrowth of InP has been grown by hydride vapor phase epitaxy on Si substrates with a thin seed layer of InP masked with SiO2. Openings in the form of multiple parallel lines as well as mesh patterns from which growth occurred were etched in the SiO2 mask and the effect of different growth conditions in terms of V/III ratio and growth temperature on defects such as threading dislocations and stacking faults in the grown layers was investigated. The samples were characterized by cathodoluminescence and by transmission electron microscopy. The results show that the cause for threading dislocations present in the overgrown layers is the formation of new dislocations, attributed to coalescence of merging growth fronts, possibly accompanied by the propagation of pre-existing dislocations through the mask openings. Stacking faults were also pre-existing in the seed layer and propagated to some extent, but the most important reason for stacking faults in the overgrown layers was concluded to be formation of new faults early during growth. The formation mechanism could not be unambiguously determined, but of several mechanisms considered, incorrect deposition due to distorted bonds along overgrowth island edges was found to be in best agreement with observations.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Heteroepitaxy
- InP on Si
- Defect Characterization
- Optical Properties
- Lateral Overgrowth
- TECHNOLOGY
Publication and Content Type
- ref (subject category)
- art (subject category)
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- By the author/editor
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Junesand, Carl
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Gau, Ming-Horn
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Sun, Yanting
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Lourdudoss, Seba ...
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Lo, Ikal
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Jimenez, Juan
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Aitor Postigo, P ...
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Miguel Morales, ...
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Hernandez, Jesus
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Molina, Sergio
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Abdessamad, Aoun ...
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Pozina, Galia
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Hultman, Lars
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Pirouz, Pirouz
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Sun, Yan-Ting
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- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Electrical Engin ...
- Articles in the publication
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Materials Expres ...
- By the university
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Royal Institute of Technology
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Linköping University