Dynamic avalanche in Si power diodes and impact ionization at the nn(+) junction

• The reverse recovery failure limit was measured with an optical technique for power diodes which sustain high levels of dynamic avalanche. Measurements and simulations indicate that these diodes withstand dynamic avalanche at the pn-junction and eventually fail as a result of a strongly inhomogeneous current distribution caused by the onset of impact ionisation at the diode nn(+) junction - a mechanism similar to the reverse bias second breakdown of bipolar transistors.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

TURN-OFF

TRANSISTORS

THYRISTORS

INJECTION

Electrical engineering, electronics and photonics

Elektroteknik, elektronik och fotonik

Publication and Content Type

ref (subject category)

art (subject category)