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Photovoltaic proper...
Photovoltaic properties of Si-NiO structure
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Paranichev, D. (author)
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Velichko, A. (author)
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Putrolaynen, V. (author)
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- Grishin, Alexander (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT,Condensed Matter Physics
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(creator_code:org_t)
- 2012-05-14
- 2012
- English.
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In: Physica Status Solidi (C) Current Topics in Solid State Physics. - : Wiley. - 1862-6351. ; 9:7, s. 1597-1599
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- The investigation of the photovoltaic properties of a Si-NiO structure was carried out. NiO films were prepared by thermal oxidation of metallic nickel at different temperatures. The load and luminous characteristics were obtained, and on the basis of these measurements the efficiency, fill factor, short circuit current and open-circuit voltage were determined. Finally, possible mechanisms of the observed phenomena, as well as the possibility of their use for optoelectronic devices, are briefly discussed.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Keyword
- Phovoltaic cell
- Schottky
- Si-NiO
Publication and Content Type
- ref (subject category)
- art (subject category)
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