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NiSi integration in...
NiSi integration in a non-selective base SiGeCHBT process
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- Haralson, Erik (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- Suvar, E. (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- Malm, B. Gunnar (author)
- KTH,Integrerade komponenter och kretsar
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- Radamson, Henry (author)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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- Wang, Yong-Bin (author)
- KTH,Integrerade komponenter och kretsar
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- Östling, Mikael (author)
- KTH,Integrerade komponenter och kretsar
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(creator_code:org_t)
- Elsevier BV, 2005
- 2005
- English.
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In: Materials Science in Semiconductor Processing. - : Elsevier BV. - 1369-8001 .- 1873-4081. ; 8:03-jan, s. 245-248
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
Close
- A self-aligned nickel silicide (salicide) process is integrated into a non-selective base SiGeC HBT process. The device features a unique, fully silicided base region that grows laterally under the emitter pedestal. This Ni(SiGe) formed in this base region was found to have a resistivity of 23-24 muOmega cm. A difference in the silicide thickness between the boron-doped SiGeC extrinsic base region and the in situ phosphorous-doped emitter region is observed and further analyzed and confirmed with a blanket wafer silicide study. The silicided device exhibited a current gain of 64 and HF device performance of 39 and 32 GHz for f(t) and f(MAX), respectively.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering (hsv//eng)
Keyword
- SiGeCHBT
- nickel silicide
- silicides
- si1-xgex
Publication and Content Type
- ref (subject category)
- art (subject category)
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