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Nuclear radiation d...
Nuclear radiation detector based on ion implanted p-n junction in 4H-SiC
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Vervisch, V. (author)
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Issa, F. (author)
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Ottaviani, L. (author)
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Szalkai, D. (author)
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Vermeeren, L. (author)
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Klix, A. (author)
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- Hallén, Anders (author)
- KTH,Integrerade komponenter och kretsar
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Kuznetsov, A. (author)
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Lazar, M. (author)
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Lyoussi, A. (author)
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(creator_code:org_t)
- IEEE, 2013
- 2013
- English.
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In: 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013. - : IEEE. - 9781479910472 ; , s. 6728002-
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- In this paper, we propose a new device detector based on ion implanted p-n junction in 4H-SiC for nuclear instrumentation. We showed the interest to use 10Boron as a Neutron Converter Layer in order to detect thermal neutrons. We present the main results obtained during irradiation tests performed in the Belgian Reactor 1. We show the capability of our detector by means of first results of the detector response at different reverse voltage biases and at different reactor power.
Keyword
- 4H-SiC
- electrical characterizations
- ion implantation
- neutron irradiation
- pn junction
Publication and Content Type
- ref (subject category)
- kon (subject category)
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- By the author/editor
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Vervisch, V.
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Issa, F.
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Ottaviani, L.
-
Szalkai, D.
-
Vermeeren, L.
-
Klix, A.
-
show more...
-
Hallén, Anders
-
Kuznetsov, A.
-
Lazar, M.
-
Lyoussi, A.
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show less...
- Articles in the publication
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2013 3rd Interna ...
- By the university
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Royal Institute of Technology