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Maximizing Integrated Optical and Electrical Properties of a Single ZnO Nanowire through Native Interfacial Doping

Ding, Huaiyi (author)
Pan, Nan (author)
Ma, Chao (author)
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Wu, Yukun (author)
Li, Junwen (author)
Cai, Hongbing (author)
Zhang, Kun (author)
Zhang, Guanghui (author)
Ren, Wenzhen (author)
Li, Jianqi (author)
Luo, Yi (author)
KTH,Teoretisk kemi och biologi
Wang, Xiaoping (author)
Hou, J. G. (author)
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 (creator_code:org_t)
2014-01-22
2014
English.
In: Advanced Materials. - : Wiley. - 0935-9648 .- 1521-4095. ; 26:19, s. 3035-3041
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • A native interfacial doping layer introduced in core-shell type ZnO nanowires by a simple vapor phase re-growth procedure endows the produced nanowires with both excellent electrical and optical performances compared to conventional homogeneous ZnO nanowires. The unique Zn-rich interfacial structure in the core-shell nanowires plays a crucial role in the outstanding performances.

Keyword

nanowires
core-shell structures
doping
ZnO
optical materials

Publication and Content Type

ref (subject category)
art (subject category)

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