The effect of oxygen partial pressure during deposition in the magnetic properties of ZnO thin film

• We have studied the magnetic properties of 100 nm thick ZnO thin films prepared by magnetron sputtering in different oxygen partial pressures (ratio of oxygen pressure to total pressure in deposition chamber, P Oxy). Only the films fabricated at P Oxy below ∼ 0.5 show room temperature ferromagnetism. The saturation magnetization at room temperature is initially found to increase as P Oxy increases and reaches maximum value of ∼ 5 emu/gm at P Oxy ∼ 0.3 and then starts to decrease and becomes diamagnetic for P Oxy > 0.5. From small angle XRD study of structural properties of the films, we find that the lattice stress developed in the film along c-axis also exhibits a similar behavior with the variation of P Oxy. Thus, both the room temperature ferromagnetism and lattice stress appear to originate from the intrinsic defects present in the sample.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

NATURVETENSKAP  -- Fysik -- Annan fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Other Physics Topics (hsv//eng)

Keyword

Deposition chambers

Effect of oxygen

Intrinsic defects

Lattice stress

Maximum values

Oxygen partial pressure

Oxygen pressure

Room temperature

Room temperature ferromagnetism

Total pressure

XRD studies

ZnO thin film

Deposition

Ferromagnetism

Magnetic properties

Metallic films

Optical films

Oxide films

Oxygen

Partial pressure

Pressure effects

Saturation magnetization

Thin films

Vapor deposition

Zinc oxide

Magnetic thick films

Publication and Content Type

ref (subject category)

kon (subject category)