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Electrical properties of high-k LaLuO3 gate oxide for SOI MOSFETs
- Gomeniuk, Y. Y. (author)
- Gomeniuk, Y. V. (author)
- Nazarov, A. N. (author)
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- Hurley, P. K. (author)
- Cherkaoui, K. (author)
- Monaghan, S. (author)
- Gottlob, H. D. B. (author)
- Schubert, J. (author)
- Lopes, J. M. J. (author)
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- (creator_code:org_t)
- 2011
- 2011
- English.
- In: 6th International Workshop on Semiconductor-on-Insulator Materials and Devices. - 9783037851784 ; , s. 87-93
- Conference paper (peer-reviewed)
Abstract
Subject headings
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- The paper presents the results of electrical characterization of MOS capacitors and SOI MOSFETs with novel high-? LaLuO3 dielectric as a gate oxide. The energy distribution of interface state density at LaLuO 3/Si interface is presented and typical maxima of 1.2×10 11 eV-1cm-2 was found at about 0.25 eV from the silicon valence band. The output and transfer characteristics of the n- and p-MOSFET (channel length and width were 1 μm and 50 μm, respectively) are presented. The front channel mobility appeared to be 126 cm2V -1s-1 and 70 cm2V-1s-1 for n- and p-MOSFET, respectively. The front channel threshold voltages as well as the density of states at the back interface are presented.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering (hsv//eng)
Keyword
- Channel mobility
- High-k oxide
- Interface states density
- LaLuO3
- Lanthanum lutetium oxide
- Molecular beam deposition MBD
- MOSFET
- SOI
- Threshold voltage
- Transconductance
- High-k oxides
- LaLuO<sub>3</sub>
- MOS-FET
- Characterization
- Chemical modification
- Electric properties
- Gates (transistor)
- Insulating materials
- Lanthanum oxides
- MOS capacitors
- Semiconductor devices
- MOSFET devices
Publication and Content Type
- ref (subject category)
- kon (subject category)
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- Gomeniuk, Y. Y.
- Gomeniuk, Y. V.
- Nazarov, A. N.
- Hurley, P. K.
- Cherkaoui, K.
- Monaghan, S.
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- Hellström, Per-E ...
- Gottlob, H. D. B ...
- Schubert, J.
- Lopes, J. M. J.
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- About the subject
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- ENGINEERING AND TECHNOLOGY
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- By the university
- Royal Institute of Technology
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