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The effect of excim...
The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon
- Article/chapterEnglish2005
Publisher, publication year, extent ...
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AIP Publishing,2005
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printrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:kth-15161
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-15161URI
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https://doi.org/10.1063/1.2126144DOI
Supplementary language notes
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Language:English
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Summary in:English
Part of subdatabase
Classification
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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QC 20100525
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We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of similar to 4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA.
Subject headings and genre
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transient enhanced diffusion
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electrical activation
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dopant diffusion
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redistribution
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shallow
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layers
Added entries (persons, corporate bodies, meetings, titles ...)
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Svensson, B. G.
(author)
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Linnarsson, Margareta K.KTH,Mikroelektronik och tillämpad fysik, MAP(Swepub:kth)u1x6y4ru
(author)
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La Magna, A.
(author)
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Italia, M.
(author)
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Privitera, V.
(author)
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Fortunato, G.
(author)
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Cuscuna, M.
(author)
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Mariucci, L.
(author)
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KTHMikroelektronik och tillämpad fysik, MAP
(creator_code:org_t)
Related titles
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In:Applied Physics Letters: AIP Publishing87:190003-69511077-3118
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