Piezoelectric activity in c-axis oriented LiNbO3/ZnO bilayers grown by laser ablation technique

• LiNbO3/ZnO multi-layer with a preferred c-axis orientation has been grown on glass and SiO2/Si substrates by laser ablation technique. The piezoelectric activity in as deposited films is demonstrated using a novel approach to the atomic force microscope. In the presence of an in plane low frequency (0.1 to 5 Hz) ac electric field, we monitor and image the induced piezoelectric response normal to the film plane between two electrodes.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Keyword

piezoelectricity

thin films

laser ablation

films

Publication and Content Type

ref (subject category)

art (subject category)