Wave-function symmetry and the properties of shallow P donors in 4H SiC

Ivanov, Ivan Gueorguiev,1955-Linköpings universitet,Tekniska högskolan,Halvledarmaterial (author)

QC 20141006
A new investigation on the optical properties of the phosphorus-bound excitons is presented. Arguments are given in favor of the possibility of degenerate donor state for phosphorus substituting Si atom on hexagonal site. On the base of a simple model, it is shown that the experimental spectra also provide evidence in favor of this possibility. The possibility for violation of the Haynes rule in the case of phosphorus donors on the two inequivalent sites is indicated.

Persson, ClasKTH,Materialvetenskap(Swepub:kth)u16hf74r (author)
Henry, Anne,1959-Linköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)annhe32 (author)
Janzén, Erik,1954-Linköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)erija14 (author)
Linköpings universitetTekniska högskolan (creator_code:org_t)

In:Silicon Carbide and Related Materials 2007, Pts 1 and 2: Trans Tech Publications Inc., s. 445-448, s. 445-448
In:Materials Science Forum, Vols. 600-603: Trans Tech Publications Inc., s. 445-448, s. 445-448

By the author/editor: Ivanov, Ivan Gue ...; Persson, Clas; Henry, Anne, 195 ...; Janzén, Erik, 19 ...

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