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Wafer Scale Graphen...
Wafer Scale Graphene Transfer for Back End of the Line Device Integration
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- Smith, Anderson (author)
- KTH,Integrerade komponenter och kretsar
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- Vaziri, Sam (author)
- KTH,Integrerade komponenter och kretsar
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- Rodriguez, Saul (author)
- KTH,Integrerade komponenter och kretsar
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- Östling, Mikael (author)
- KTH,Integrerade komponenter och kretsar
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Lemme, M. C. (author)
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(creator_code:org_t)
- 2014
- 2014
- English.
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In: INT CONF ULTI INTEGR. - 2330-5738. ; , s. 29-32
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- We report on a wafer scale fabrication of graphene based field effect transistors (GFETs) for use in future radio frequency (RF) and sensor applications. The process is also almost entirely CMOS compatible and uses a scalable graphene transfer method that can be incorporated in standard CMOS back end of the line (BEOL) process flows. Such a process can be used to integrate high speed GFET devices and graphene sensors with silicon CMOS circuits.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- graphene
- transistors
- graphene transfer
- wafer scale
- GFET
- more than Moore
- Moore's Law
Publication and Content Type
- ref (subject category)
- art (subject category)
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