Rare-Earth-Ion-Doped Channel Waveguide Lasers on Silicon

• This paper reviews the recent developments in rare-earth-ion-doped channel waveguide lasers. Optical gain in rare-earth-ion-doped waveguides has been increased by two orders of magnitude to similar to 1000 dB/cm and waveguide lasers with extremely high slope efficiencies and output powers exceeding the Watt level have been demonstrated. Of particular interest in integrated optics is the recent integration of rare-earth-ion-doped channel waveguide lasers in amorphous materials directly deposited on a silicon substrate. Remarkable performance with respect to slope efficiency, output power, and laser linewidth has been achieved.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Amorphous materials

CW lasers

dielectric waveguides

distributed Bragg reflector lasers

distributed feedback lasers

integrated optics

optical amplifiers

planar waveguides

rare earth compounds

solid lasers

Publication and Content Type

ref (subject category)

art (subject category)