Strain-free low-defect-density bulk GaN with nonpolar orientations

• Bulk GaN sliced in bars along (11-20) and (1-100) planes from a boule grown in the [0001] direction by HVPE was confirmed as strain free material with a low dislocation density by using several characterization techniques. The high-structural quality of the material allows photoluminescence studies of free excitons, principal donor bound excitons and their twoelectron satellites with regard to the optical selection rules. Raman scattering study of the bulk GaN with nonpolar orientations allows a direct access to the active phonon modes and a direct determination of their strain-free positions.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Annan materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Other Materials Engineering (hsv//eng)

Keyword

Nonpolar orientations

Strain free material

Strain-free positions

Excitons

Phonons

Photoluminescence

Raman scattering

Gallium nitride

Publication and Content Type

ref (subject category)

kon (subject category)